Q.2. For E-MOSFET drain-feedback bias as shown in Fig.1 is biased at VGsQ = 81 where, VGs(Th) 3 V, VDD = 16 V, R₁ = 10 MS2, R₁ = 2.2 ks, and r₁ = 100 k2, a (k = 0.3 x 10). Determine the following: gm, Z, Zo, and A,. -VDD RD C₂ RF +6 C₁ Z ไม่ Figure L
Q.2. For E-MOSFET drain-feedback bias as shown in Fig.1 is biased at VGsQ = 81 where, VGs(Th) 3 V, VDD = 16 V, R₁ = 10 MS2, R₁ = 2.2 ks, and r₁ = 100 k2, a (k = 0.3 x 10). Determine the following: gm, Z, Zo, and A,. -VDD RD C₂ RF +6 C₁ Z ไม่ Figure L
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
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![Q.2. For E-MOSFET drain-feedback bias as shown in Fig.1 is biased at VGsQ = 81
where, VGs(Th) 3 V, VDD = 16 V, R₁ = 10 MS2, R₁ = 2.2 ks, and r₁ = 100 k2, a
(k = 0.3 x 10). Determine the following: gm, Z, Zo, and A,.
-VDD
RD
C₂
RF
+6
C₁
Z
ไม่
Figure L](/v2/_next/image?url=https%3A%2F%2Fcontent.bartleby.com%2Fqna-images%2Fquestion%2Faf3b189c-b9e7-4d0a-aa02-0ee8de32758d%2F7668b5dc-3a31-47d8-8537-7d4327fe3321%2F9w48ds_processed.jpeg&w=3840&q=75)
Transcribed Image Text:Q.2. For E-MOSFET drain-feedback bias as shown in Fig.1 is biased at VGsQ = 81
where, VGs(Th) 3 V, VDD = 16 V, R₁ = 10 MS2, R₁ = 2.2 ks, and r₁ = 100 k2, a
(k = 0.3 x 10). Determine the following: gm, Z, Zo, and A,.
-VDD
RD
C₂
RF
+6
C₁
Z
ไม่
Figure L
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