O 1) What are electron, hole, intrinsic carrier concentration, and energy band gap in Si with (a) Nd = 4x10" cm * and Na = 1x10“ cm * and (b) additional 6x10" cm * of Nd? Note: use Effective density of %3D conduction band = 2.8 x 10 19 cm 3. Effective density of valance band =1.04 x 10 19 cm 3. T= 300 K, Boltzmann constant = 1.38x 1023 Kg s K'.

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Q 1) What are electron, hole, intrinsic carrier concentration, and energy band gap in Si with (a) Nd =
4×106
cm and Na = 1x10° cm
-3
-3
and (b) additional 6x10 cm
-3
of Nd? Note: use Effective density of
conduction band = 2.8 x 10 19
-3
cm
Effective density of valance band =1.04 x 10 9 cm *. T= 300 K,
Boltzmann constant = 1.38x 10 Kg s K'.
Transcribed Image Text:Q 1) What are electron, hole, intrinsic carrier concentration, and energy band gap in Si with (a) Nd = 4×106 cm and Na = 1x10° cm -3 -3 and (b) additional 6x10 cm -3 of Nd? Note: use Effective density of conduction band = 2.8 x 10 19 -3 cm Effective density of valance band =1.04 x 10 9 cm *. T= 300 K, Boltzmann constant = 1.38x 10 Kg s K'.
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