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Problem 3. Phosphorus is diffused into a thick slice of silicon with no previous phosphorus in it at a temperature of 1100°C. If the surface concentration of the phosphorus is 1 × 1018 atoms/cm and its concentration at 1 µm is 1 × 1015 atoms/cm', how long must be the diffusion time? D= 3.0 x 10-13 cm²/s for P diffusing in Si at 1100°C.

Problem 3. Phosphorus is diffused into a thick slice of silicon with no previous phosphorus in it at a temperature of 1100°C. If the surface concentration of the phosphorus is 1 × 1018 atoms/cm and its concentration at 1 µm is 1 × 1015 atoms/cm', how long must be the diffusion time? D= 3.0 x 10-13 cm²/s for P diffusing in Si at 1100°C.

Elements Of Electromagnetics
Elements Of Electromagnetics
7th Edition
ISBN:9780190698614
Author:Sadiku, Matthew N. O.
Publisher:Sadiku, Matthew N. O.
ChapterMA: Math Assessment
Section: Chapter Questions
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Problem 3. Phosphorus is diffused into a thick slice of silicon with no previous phosphorus in it at a temperature of 1100°C. If the surface concentration of the phosphorus is 1 × 1018 atoms/cm³ and its concentration at 1 um is 1 × 1015 atoms/cm, how long must be the diffusion time? D = 3.0 x 10-13 cm²/s for P diffusing in Si at 1100°C.
Transcribed Image Text:Problem 3. Phosphorus is diffused into a thick slice of silicon with no previous phosphorus in it at a temperature of 1100°C. If the surface concentration of the phosphorus is 1 × 1018 atoms/cm³ and its concentration at 1 um is 1 × 1015 atoms/cm, how long must be the diffusion time? D = 3.0 x 10-13 cm²/s for P diffusing in Si at 1100°C.
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