Aluminum atoms are to be diffused into a silicon wafer using both predeposition and drive-in heat treatments; the background concentration of Al in this silicon material is known to be 3.5 × 10¹⁹ atoms/m³. The drive-in diffusion treatment is to be carried out at 1050°C for a period of 4.0 h, which gives a junction depth x; of 3.0 μm. Compute the predeposition diffusion time at 950°C if the surface concentration is maintained at a constant level of 2 × 1025 atoms/m³. For the diffusion of Al in Si, values of Qd and Do are 3.41 eV and 1.38 × 10-4 m²/s, respectively.

Aluminum atoms are to be diffused into a silicon wafer using both predeposition and drive-in heat treatments; the background concentration of Al in this silicon material is known to be 3.5 × 10¹⁹ atoms/m³. The drive-in diffusion treatment is to be carried out at 1050°C for a period of 4.0 h, which gives a junction depth x; of 3.0 μm. Compute the predeposition diffusion time at 950°C if the surface concentration is maintained at a constant level of 2 × 1025 atoms/m³. For the diffusion of Al in Si, values of Qd and Do are 3.41 eV and 1.38 × 10-4 m²/s, respectively.

Elements Of Electromagnetics

7th Edition

ISBN:9780190698614

Author:Sadiku, Matthew N. O.

Publisher:Sadiku, Matthew N. O.

ChapterMA: Math Assessment

Section: Chapter Questions

Problem 1.1MA

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