Aluminum atoms are to be diffused into a silicon wafer using both predeposition and drive-in heat treatments; the background concentration of Al in this silicon material is known to be 3.5 × 10¹⁹ atoms/m³. The drive-in diffusion treatment is to be carried out at 1050°C for a period of 4.0 h, which gives a junction depth x; of 3.0 μm. Compute the predeposition diffusion time at 950°C if the surface concentration is maintained at a constant level of 2 × 1025 atoms/m³. For the diffusion of Al in Si, values of Qd and Do are 3.41 eV and 1.38 × 10-4 m²/s, respectively.

Aluminum atoms are to be diffused into a silicon wafer using both predeposition and drive-in heat treatments; the background concentration of Al in this silicon material is known to be 3.5 × 10¹⁹ atoms/m³. The drive-in diffusion treatment is to be carried out at 1050°C for a period of 4.0 h, which gives a junction depth x; of 3.0 μm. Compute the predeposition diffusion time at 950°C if the surface concentration is maintained at a constant level of 2 × 1025 atoms/m³. For the diffusion of Al in Si, values of Qd and Do are 3.41 eV and 1.38 × 10-4 m²/s, respectively.

Elements Of Electromagnetics

7th Edition

ISBN:9780190698614

Author:Sadiku, Matthew N. O.

Publisher:Sadiku, Matthew N. O.

ChapterMA: Math Assessment

Section: Chapter Questions

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Concept explainers

Atomic diffusion in solids

In material science, diffusion can take place in solid, liquid, and gases. In solids, atomic diffusion can take place with the help of thermally activated and randomly vibrating atoms. The atomic diffusion in solids is complex and very slow in comparison to atomic diffusion in liquids and gases because the interatomic distance between the atoms is smaller in solids as compared to liquids and gases.

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Aluminum atoms are to be diffused into a silicon wafer using both predeposition and drive-in heat
treatments; the background concentration of Al in this silicon material is known to be 3.5 × 101⁹
atoms/m³. The drive-in diffusion treatment is to be carried out at 1050°C for a period of 4.0 h, which gives
a junction depth x; of 3.0 µm. Compute the predeposition diffusion time at 950°C if the surface
concentration is maintained at a constant level of 2 x 1025 atoms/m³. For the diffusion of Al in Si, values of
Qd and Do are 3.41 eV and 1.38 × 10-4 m²/s, respectively.

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