Please answer Q2 and Q3 only 1. Assume DB = 40 cm²/s, DE = 10 cm²/s, WE - 100 nm, WB - 50 nm, №₂ = 1017 cm³. Find Band a for: (a) N=2*1018 cm³, (b) N=5*1019 cm³, (c) N = 1020 cm³ and a SiGe base with 4EB = 80 meV, gB 2. Calculate ẞ and a for the transistor described above but with the base doping concentration gradually changing from 1018 to 10 17 cm³. 3. Calculate collector and base currents of the transistors described above.

Introductory Circuit Analysis (13th Edition)
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ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
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Please answer Q2 and Q3 only
1. Assume DB = 40 cm²/s, DE = 10 cm²/s, WE - 100 nm, WB - 50 nm, №₂ = 1017 cm³.
Find Band a for:
(a) N=2*1018 cm³,
(b) N=5*1019 cm³,
(c) N = 1020 cm³ and a SiGe base with 4EB = 80 meV,
gB
2. Calculate ẞ and a for the transistor described above but with the base doping
concentration gradually changing from 1018 to 10 17 cm³.
3. Calculate collector and base currents of the transistors described above.
Transcribed Image Text:Please answer Q2 and Q3 only 1. Assume DB = 40 cm²/s, DE = 10 cm²/s, WE - 100 nm, WB - 50 nm, №₂ = 1017 cm³. Find Band a for: (a) N=2*1018 cm³, (b) N=5*1019 cm³, (c) N = 1020 cm³ and a SiGe base with 4EB = 80 meV, gB 2. Calculate ẞ and a for the transistor described above but with the base doping concentration gradually changing from 1018 to 10 17 cm³. 3. Calculate collector and base currents of the transistors described above.
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