Question 3: For the PMOS shown VTHP = 900 mV KPp= 40 uA/N?, and (W/L) = (30/2), Calculate the drain current Ip and Vps.

Introductory Circuit Analysis (13th Edition)
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Please answer the question 3 with details on how to do it. Please make handwriting legible. Thank you.

**Question 3:**

For the PMOS shown \( V_{THP} = 900 \text{ mV}, \, K_P = 40 \, \mu\text{A/V}^2 \), and \( (W/L) = (30/2) \), calculate the drain current \( I_D \) and \( V_{DS} \).

**Circuit Diagram Explanation:**

The given circuit diagram consists of a PMOS transistor labeled M1. The transistor has:

- **Gate-Source Voltage (\( V_{GS} \))**: A voltage source labeled 3.8 V is connected to the gate.
- **PMOS Transistor (\( M1 \))**: The transistor’s width to length ratio \( (W/L) \) is specified as \( 30 \, \mu\text{m}/2 \, \mu\text{m} \).
- **Resistor (\( R1 \))**: A 100 kΩ resistor is connected in series with the PMOS.
- **Power Supply (\( V_{DD} \))**: Marked as 5 V.

The PMOS is typically used here in a configuration where \( I_D \) and \( V_{DS} \) need to be calculated, using the provided parameters:

- **Threshold Voltage (\( V_{THP} \))**: 900 mV.
- **Transconductance Parameter (\( K_P \))**: 40 \(\mu\text{A/V}^2\).

The circuit involves analyzing the PMOS in saturation or non-saturation mode, depending on the voltage values and setups.
Transcribed Image Text:**Question 3:** For the PMOS shown \( V_{THP} = 900 \text{ mV}, \, K_P = 40 \, \mu\text{A/V}^2 \), and \( (W/L) = (30/2) \), calculate the drain current \( I_D \) and \( V_{DS} \). **Circuit Diagram Explanation:** The given circuit diagram consists of a PMOS transistor labeled M1. The transistor has: - **Gate-Source Voltage (\( V_{GS} \))**: A voltage source labeled 3.8 V is connected to the gate. - **PMOS Transistor (\( M1 \))**: The transistor’s width to length ratio \( (W/L) \) is specified as \( 30 \, \mu\text{m}/2 \, \mu\text{m} \). - **Resistor (\( R1 \))**: A 100 kΩ resistor is connected in series with the PMOS. - **Power Supply (\( V_{DD} \))**: Marked as 5 V. The PMOS is typically used here in a configuration where \( I_D \) and \( V_{DS} \) need to be calculated, using the provided parameters: - **Threshold Voltage (\( V_{THP} \))**: 900 mV. - **Transconductance Parameter (\( K_P \))**: 40 \(\mu\text{A/V}^2\). The circuit involves analyzing the PMOS in saturation or non-saturation mode, depending on the voltage values and setups.
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