p-i-n junction demonstrated in Figure B2-a is utilized to functionalize as a tunnelling FET. Gate Source Drain р i n i. ii. iii. Figure B2-a Sketch the p-i-n cross-section energy band diagram under thermodynamic equilibrium. Sketch the gate metal-oxide-semiconductor cross-section energy band diagram under thermodynamic equilibrium. Re-sketch (i) and (ii) when 0.5 V is applied on the gate. iv. Compare (iii) with a corresponding MOSFET energy band diagram.

Elements Of Electromagnetics
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p-i-n junction demonstrated in Figure B2-a is utilized to functionalize as a
tunnelling FET.
Gate
Source
Drain
р
i
n
i.
ii.
iii.
Figure B2-a
Sketch the p-i-n cross-section energy band diagram under thermodynamic
equilibrium.
Sketch the gate metal-oxide-semiconductor cross-section energy band
diagram under thermodynamic equilibrium.
Re-sketch (i) and (ii) when 0.5 V is applied on the gate.
iv. Compare (iii) with a corresponding MOSFET energy band diagram.
Transcribed Image Text:p-i-n junction demonstrated in Figure B2-a is utilized to functionalize as a tunnelling FET. Gate Source Drain р i n i. ii. iii. Figure B2-a Sketch the p-i-n cross-section energy band diagram under thermodynamic equilibrium. Sketch the gate metal-oxide-semiconductor cross-section energy band diagram under thermodynamic equilibrium. Re-sketch (i) and (ii) when 0.5 V is applied on the gate. iv. Compare (iii) with a corresponding MOSFET energy band diagram.
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