Objective: Calculate the drift current density for a given semiconductor.Consider silicon at T = 300 K doped with arsenic atoms at a concentrationof N₁ = 8 x 10¹5 cm. Assume mobility values of μ = 1350 cm²/V-s and µp =480 cm²/V-s. Assume the applied electric field is 100 V/cm.

T=300 K,Nd=8×1015 cm-3,μn=1350 cm2/V-s,μp=480 cm2/V-s.

Objective: Calculate the drift current density for a given semiconductor. Consider silicon at T = 300 K doped with arsenic atoms at a concentration of Na = 8 x 10¹5 cm³. Assume mobility values of μ = 1350 cm²/V-s and H₂ = 480 cm²/V-s. Assume the applied electric field is 100 V/cm.

Objective: Calculate the drift current density for a given semiconductor. Consider silicon at T = 300 K doped with arsenic atoms at a concentration of Na = 8 x 10¹5 cm³. Assume mobility values of μ = 1350 cm²/V-s and H₂ = 480 cm²/V-s. Assume the applied electric field is 100 V/cm.

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

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Objective: Calculate the drift current density for a given semiconductor.
Consider silicon at T = 300 K doped with arsenic atoms at a concentration
of N₁ = 8 x 10¹5 cm. Assume mobility values of μ = 1350 cm²/V-s and µp =
480 cm²/V-s. Assume the applied electric field is 100 V/cm.

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Step 2: Calculation of Conductivity, and determination of type of Semiconductor based on doping.

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Step 3: Calculation of Drift Current Density.

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