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Light of 850 nm is to be transmitted using a specific optical fiber cable having attenuation of 3.5 dB/Km and length L=3.7 Km, if the input optical power to the fiber cable is 0.5 mW, calculate the output optical power in µW. O a. 58.44 uW O b. 500.0 µVW O c. 25.35 uW O d. 0.04985 µW e. 0.02910 uW

Light of 850 nm is to be transmitted using a specific optical fiber cable having attenuation of 3.5 dB/Km and length L=3.7 Km, if the input optical power to the fiber cable is 0.5 mW, calculate the output optical power in µW. O a. 58.44 uW O b. 500.0 µVW O c. 25.35 uW O d. 0.04985 µW e. 0.02910 uW

Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
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Light of 850 nm is to be transmitted using a specific optical fiber cable having attenuation of 3.5 dB/Km and length L 3.7 Km, if the input optical power to the fiber cable is 0.5 mW, calculate the output optical power in AW. O a. 58.44 uVW O b. 500.0 uW O c. 25.35 uW O d. 0.04985 µW O e. 0.02910 µW
Transcribed Image Text:Light of 850 nm is to be transmitted using a specific optical fiber cable having attenuation of 3.5 dB/Km and length L 3.7 Km, if the input optical power to the fiber cable is 0.5 mW, calculate the output optical power in AW. O a. 58.44 uVW O b. 500.0 uW O c. 25.35 uW O d. 0.04985 µW O e. 0.02910 µW
Prof. O M Khreis Мау 2, 2020 : Si, Ge, GaAs Parameters and Universal Constants UNIVERSAL CONSTANTS Properties SEMICONDUCTOR h 6.63 x 10-34 J.s Si Ge mo 9.11 x 10-31 Kg Eg (eV) ni (cm-3) Hn (cm2/V – s) Нp (ст? /V — s) Ne (cm-3) No (cm3) 1.1 0.67 1.42 3.14 1.5 x 1010 2.3 x 1013 1.8 x 106 1.602 x 10-19 C 1500 3900 8500 Eo 8.85 x 10-12 F/m 450 1900 400 -34 1.05 х 10° J- s 2.78 x 1019 1.04 x 1019 4.45 x 1017 K 8.6 x 10-5 eV/K 9.84 x 1018 6 x 1018 7.72 x 1018 26 mV (T = 300 K) 26 meV (T = 300 K) 3 x 10 m/s KT/q m/m. m; /m. Er (F/m) 0.082 0.98 0.067 KT 0.28 0.49 0.45 11.7 16 13.1 nair = 1 NGAAS = 3.66 Some useful relations EGAL Ga1-2As(r) = 1.424 + 1.247x EgInz Ga1-zAs (x) = 0.36 + 1.064.r 1 eV = 1.602 x 10-19 J 1 KG = 1 x 10-5 Wb/cm2
Transcribed Image Text:Prof. O M Khreis Мау 2, 2020 : Si, Ge, GaAs Parameters and Universal Constants UNIVERSAL CONSTANTS Properties SEMICONDUCTOR h 6.63 x 10-34 J.s Si Ge mo 9.11 x 10-31 Kg Eg (eV) ni (cm-3) Hn (cm2/V – s) Нp (ст? /V — s) Ne (cm-3) No (cm3) 1.1 0.67 1.42 3.14 1.5 x 1010 2.3 x 1013 1.8 x 106 1.602 x 10-19 C 1500 3900 8500 Eo 8.85 x 10-12 F/m 450 1900 400 -34 1.05 х 10° J- s 2.78 x 1019 1.04 x 1019 4.45 x 1017 K 8.6 x 10-5 eV/K 9.84 x 1018 6 x 1018 7.72 x 1018 26 mV (T = 300 K) 26 meV (T = 300 K) 3 x 10 m/s KT/q m/m. m; /m. Er (F/m) 0.082 0.98 0.067 KT 0.28 0.49 0.45 11.7 16 13.1 nair = 1 NGAAS = 3.66 Some useful relations EGAL Ga1-2As(r) = 1.424 + 1.247x EgInz Ga1-zAs (x) = 0.36 + 1.064.r 1 eV = 1.602 x 10-19 J 1 KG = 1 x 10-5 Wb/cm2
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