Light of 850 nm is to be transmitted using a specific optical fiber cable having attenuation of 3.5 dB/Km and length L=3.7 Km, if the input optical power to the fiber cable is 0.5 mW, calculate the output optical power in µW. O a. 58.44 uW O b. 500.0 µVW O c. 25.35 uW O d. 0.04985 µW e. 0.02910 uW
Light of 850 nm is to be transmitted using a specific optical fiber cable having attenuation of 3.5 dB/Km and length L=3.7 Km, if the input optical power to the fiber cable is 0.5 mW, calculate the output optical power in µW. O a. 58.44 uW O b. 500.0 µVW O c. 25.35 uW O d. 0.04985 µW e. 0.02910 uW
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
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![Light of 850 nm is to be transmitted using a specific optical fiber cable having attenuation of 3.5 dB/Km and
length L 3.7 Km, if the input optical power to the fiber cable is 0.5 mW, calculate the output optical power in
AW.
O a. 58.44 uVW
O b. 500.0 uW
O c. 25.35 uW
O d. 0.04985 µW
O e. 0.02910 µW](/v2/_next/image?url=https%3A%2F%2Fcontent.bartleby.com%2Fqna-images%2Fquestion%2F7fa8d65d-dcb0-4191-b587-c800cb38bb31%2F1f3debe9-cde4-4968-a8dc-476eb054960f%2F47gsw_processed.jpeg&w=3840&q=75)
Transcribed Image Text:Light of 850 nm is to be transmitted using a specific optical fiber cable having attenuation of 3.5 dB/Km and
length L 3.7 Km, if the input optical power to the fiber cable is 0.5 mW, calculate the output optical power in
AW.
O a. 58.44 uVW
O b. 500.0 uW
O c. 25.35 uW
O d. 0.04985 µW
O e. 0.02910 µW
![Prof. O M Khreis
Мау 2, 2020
: Si, Ge, GaAs Parameters and Universal Constants
UNIVERSAL CONSTANTS
Properties
SEMICONDUCTOR
h
6.63 x 10-34 J.s
Si
Ge
mo
9.11 x 10-31
Kg
Eg (eV)
ni (cm-3)
Hn (cm2/V – s)
Нp (ст? /V — s)
Ne (cm-3)
No (cm3)
1.1
0.67
1.42
3.14
1.5 x 1010
2.3 x 1013
1.8 x 106
1.602 x 10-19 C
1500
3900
8500
Eo
8.85 x 10-12 F/m
450
1900
400
-34
1.05 х 10°
J- s
2.78 x 1019
1.04 x 1019
4.45 x 1017
K
8.6 x 10-5 eV/K
9.84 x 1018
6 x 1018
7.72 x 1018
26 mV (T = 300 K)
26 meV (T = 300 K)
3 x 10 m/s
KT/q
m/m.
m; /m.
Er (F/m)
0.082
0.98
0.067
KT
0.28
0.49
0.45
11.7
16
13.1
nair = 1
NGAAS = 3.66
Some useful relations
EGAL Ga1-2As(r) = 1.424 + 1.247x
EgInz Ga1-zAs (x) = 0.36 + 1.064.r
1 eV = 1.602 x 10-19 J
1 KG = 1 x 10-5 Wb/cm2](/v2/_next/image?url=https%3A%2F%2Fcontent.bartleby.com%2Fqna-images%2Fquestion%2F7fa8d65d-dcb0-4191-b587-c800cb38bb31%2F1f3debe9-cde4-4968-a8dc-476eb054960f%2Fnjdxqkh_processed.jpeg&w=3840&q=75)
Transcribed Image Text:Prof. O M Khreis
Мау 2, 2020
: Si, Ge, GaAs Parameters and Universal Constants
UNIVERSAL CONSTANTS
Properties
SEMICONDUCTOR
h
6.63 x 10-34 J.s
Si
Ge
mo
9.11 x 10-31
Kg
Eg (eV)
ni (cm-3)
Hn (cm2/V – s)
Нp (ст? /V — s)
Ne (cm-3)
No (cm3)
1.1
0.67
1.42
3.14
1.5 x 1010
2.3 x 1013
1.8 x 106
1.602 x 10-19 C
1500
3900
8500
Eo
8.85 x 10-12 F/m
450
1900
400
-34
1.05 х 10°
J- s
2.78 x 1019
1.04 x 1019
4.45 x 1017
K
8.6 x 10-5 eV/K
9.84 x 1018
6 x 1018
7.72 x 1018
26 mV (T = 300 K)
26 meV (T = 300 K)
3 x 10 m/s
KT/q
m/m.
m; /m.
Er (F/m)
0.082
0.98
0.067
KT
0.28
0.49
0.45
11.7
16
13.1
nair = 1
NGAAS = 3.66
Some useful relations
EGAL Ga1-2As(r) = 1.424 + 1.247x
EgInz Ga1-zAs (x) = 0.36 + 1.064.r
1 eV = 1.602 x 10-19 J
1 KG = 1 x 10-5 Wb/cm2
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