Let's say we have a 0.22 µm (micrometer) think Cu wire in a 65 nanometer process. Resistivity of the Cu is 2.2 μ- cm (micro-ohm-centimeter). a) Compute the sheet resistance of the wire b) Find the total resistance if the wire is 0.125 um wide and 1mm long. (Ignore the barrier layer and dishing) c) Suppose that 10x unit-sized inverter drives a 2x inverter at the end of the 1 mm long of the wire. Its wire capacitance is 0.2 fF/ um and the unit-sized nMOS transistor has R=10k and C=0.1 fF. Complete the following equivalent circuit using a single-segment II model. ( ) ≤ ( ) fF Driver ( )Ω Wire ( ) fF ( ) fF Load d) Estimate the propagation delay using a single-segment II Elmore delay model. (neglect diffusion capacitance)

Let's say we have a 0.22 µm (micrometer) think Cu wire in a 65 nanometer process. Resistivity of the Cu is 2.2 μ- cm (micro-ohm-centimeter). a) Compute the sheet resistance of the wire b) Find the total resistance if the wire is 0.125 um wide and 1mm long. (Ignore the barrier layer and dishing) c) Suppose that 10x unit-sized inverter drives a 2x inverter at the end of the 1 mm long of the wire. Its wire capacitance is 0.2 fF/ um and the unit-sized nMOS transistor has R=10k and C=0.1 fF. Complete the following equivalent circuit using a single-segment II model. ( ) ≤ ( ) fF Driver ( )Ω Wire ( ) fF ( ) fF Load d) Estimate the propagation delay using a single-segment II Elmore delay model. (neglect diffusion capacitance)

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

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Question

Let's say we have a 0.22 µm (micrometer) think Cu wire in a 65 nanometer process. Resistivity of
the Cu is 2.2 µ2 cm (micro-ohm-centimeter).
a) Compute the sheet resistance of the wire
b) Find the total resistance if the wire is 0.125 µm wide and 1mm long. (Ignore the barrier layer
and dishing)
c) Suppose that 10x unit-sized inverter drives a 2x inverter at the end of the 1 mm long of the
wire. Its wire capacitance is 0.2 fF/ µm and the unit-sized nMOS transistor has R=10k and
C=0.1 fF. Complete the following equivalent circuit using a single-segment II model.
( ) 2
( ) fF
Driver
( ) Ω
Wire
( ) fF
₁
Load
) fF
d) Estimate the propagation delay using a single-segment II Elmore delay model. (neglect
diffusion capacitance)

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