Let's say we have a 0.22 µm (micrometer) think Cu wire in a 65 nanometer process. Resistivity of the Cu is 2.2 μ- cm (micro-ohm-centimeter). a) Compute the sheet resistance of the wire b) Find the total resistance if the wire is 0.125 um wide and 1mm long. (Ignore the barrier layer and dishing) c) Suppose that 10x unit-sized inverter drives a 2x inverter at the end of the 1 mm long of the wire. Its wire capacitance is 0.2 fF/ um and the unit-sized nMOS transistor has R=10k and C=0.1 fF. Complete the following equivalent circuit using a single-segment II model. ( ) ≤ ( ) fF Driver ( )Ω Wire ( ) fF ( ) fF Load d) Estimate the propagation delay using a single-segment II Elmore delay model. (neglect diffusion capacitance)

Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
Section: Chapter Questions
Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...
icon
Related questions
Question
Let's say we have a 0.22 µm (micrometer) think Cu wire in a 65 nanometer process. Resistivity of
the Cu is 2.2 µ2 cm (micro-ohm-centimeter).
a) Compute the sheet resistance of the wire
b) Find the total resistance if the wire is 0.125 µm wide and 1mm long. (Ignore the barrier layer
and dishing)
c) Suppose that 10x unit-sized inverter drives a 2x inverter at the end of the 1 mm long of the
wire. Its wire capacitance is 0.2 fF/ µm and the unit-sized nMOS transistor has R=10k and
C=0.1 fF. Complete the following equivalent circuit using a single-segment II model.
( ) 2
( ) fF
Driver
( ) Ω
Wire
( ) fF
₁
Load
) fF
d) Estimate the propagation delay using a single-segment II Elmore delay model. (neglect
diffusion capacitance)
Transcribed Image Text:Let's say we have a 0.22 µm (micrometer) think Cu wire in a 65 nanometer process. Resistivity of the Cu is 2.2 µ2 cm (micro-ohm-centimeter). a) Compute the sheet resistance of the wire b) Find the total resistance if the wire is 0.125 µm wide and 1mm long. (Ignore the barrier layer and dishing) c) Suppose that 10x unit-sized inverter drives a 2x inverter at the end of the 1 mm long of the wire. Its wire capacitance is 0.2 fF/ µm and the unit-sized nMOS transistor has R=10k and C=0.1 fF. Complete the following equivalent circuit using a single-segment II model. ( ) 2 ( ) fF Driver ( ) Ω Wire ( ) fF ₁ Load ) fF d) Estimate the propagation delay using a single-segment II Elmore delay model. (neglect diffusion capacitance)
Expert Solution
trending now

Trending now

This is a popular solution!

steps

Step by step

Solved in 6 steps with 3 images

Blurred answer
Knowledge Booster
Solar cell
Learn more about
Need a deep-dive on the concept behind this application? Look no further. Learn more about this topic, electrical-engineering and related others by exploring similar questions and additional content below.
Similar questions
  • SEE MORE QUESTIONS
Recommended textbooks for you
Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
Electrical Engineering
ISBN:
9780133923605
Author:
Robert L. Boylestad
Publisher:
PEARSON
Delmar's Standard Textbook Of Electricity
Delmar's Standard Textbook Of Electricity
Electrical Engineering
ISBN:
9781337900348
Author:
Stephen L. Herman
Publisher:
Cengage Learning
Programmable Logic Controllers
Programmable Logic Controllers
Electrical Engineering
ISBN:
9780073373843
Author:
Frank D. Petruzella
Publisher:
McGraw-Hill Education
Fundamentals of Electric Circuits
Fundamentals of Electric Circuits
Electrical Engineering
ISBN:
9780078028229
Author:
Charles K Alexander, Matthew Sadiku
Publisher:
McGraw-Hill Education
Electric Circuits. (11th Edition)
Electric Circuits. (11th Edition)
Electrical Engineering
ISBN:
9780134746968
Author:
James W. Nilsson, Susan Riedel
Publisher:
PEARSON
Engineering Electromagnetics
Engineering Electromagnetics
Electrical Engineering
ISBN:
9780078028151
Author:
Hayt, William H. (william Hart), Jr, BUCK, John A.
Publisher:
Mcgraw-hill Education,