Let's say we have a 0.22 µm (micrometer) think Cu wire in a 65 nanometer process. Resistivity of the Cu is 2.2 μ- cm (micro-ohm-centimeter). a) Compute the sheet resistance of the wire b) Find the total resistance if the wire is 0.125 um wide and 1mm long. (Ignore the barrier layer and dishing) c) Suppose that 10x unit-sized inverter drives a 2x inverter at the end of the 1 mm long of the wire. Its wire capacitance is 0.2 fF/ um and the unit-sized nMOS transistor has R=10k and C=0.1 fF. Complete the following equivalent circuit using a single-segment II model. ( ) ≤ ( ) fF Driver ( )Ω Wire ( ) fF ( ) fF Load d) Estimate the propagation delay using a single-segment II Elmore delay model. (neglect diffusion capacitance)
Let's say we have a 0.22 µm (micrometer) think Cu wire in a 65 nanometer process. Resistivity of the Cu is 2.2 μ- cm (micro-ohm-centimeter). a) Compute the sheet resistance of the wire b) Find the total resistance if the wire is 0.125 um wide and 1mm long. (Ignore the barrier layer and dishing) c) Suppose that 10x unit-sized inverter drives a 2x inverter at the end of the 1 mm long of the wire. Its wire capacitance is 0.2 fF/ um and the unit-sized nMOS transistor has R=10k and C=0.1 fF. Complete the following equivalent circuit using a single-segment II model. ( ) ≤ ( ) fF Driver ( )Ω Wire ( ) fF ( ) fF Load d) Estimate the propagation delay using a single-segment II Elmore delay model. (neglect diffusion capacitance)
Power System Analysis and Design (MindTap Course List)
6th Edition
ISBN:9781305632134
Author:J. Duncan Glover, Thomas Overbye, Mulukutla S. Sarma
Publisher:J. Duncan Glover, Thomas Overbye, Mulukutla S. Sarma
Chapter4: Transmission Line Parameters
Section: Chapter Questions
Problem 4.2P: The temperature dependence of resistance is also quantified by the relation R2=R1[ 1+(T2T1) ] where...
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Transcribed Image Text:Let's say we have a 0.22 µm (micrometer) think Cu wire in a 65 nanometer process. Resistivity of
the Cu is 2.2 µ2 cm (micro-ohm-centimeter).
a) Compute the sheet resistance of the wire
b) Find the total resistance if the wire is 0.125 µm wide and 1mm long. (Ignore the barrier layer
and dishing)
c) Suppose that 10x unit-sized inverter drives a 2x inverter at the end of the 1 mm long of the
wire. Its wire capacitance is 0.2 fF/ µm and the unit-sized nMOS transistor has R=10k and
C=0.1 fF. Complete the following equivalent circuit using a single-segment II model.
( ) 2
( ) fF
Driver
( ) Ω
Wire
( ) fF
₁
Load
) fF
d) Estimate the propagation delay using a single-segment II Elmore delay model. (neglect
diffusion capacitance)
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