Problem 3 , a. Compute the sheet resistance of a 0.22 µm thick Al wire (assume a resistivity of 3.6 µN · cm) in a 65 nm process. Find the total resistance if the wire is 0.125 µm wide and 1 mm long. b. A 10x unit-sized inverter drives a 2x inverter at the end of the wire from part a. Suppose that the Al wire capacitance is 0.3 fF/µm and that a unit-sized nMOS transistor has R = 10 kN and C = 0.1 fF. Estimate the propagation delay using the Elmore delay model, neglect diffusion capacitance. c. Find the RC flight time per mm² for the wire from part a. Express the result in FO4/mm², if the FO4 inverter delay is 15 ps. What is the flight time to cross a 10 mm die?

Problem 3 , a. Compute the sheet resistance of a 0.22 µm thick Al wire (assume a resistivity of 3.6 µN · cm) in a 65 nm process. Find the total resistance if the wire is 0.125 µm wide and 1 mm long. b. A 10x unit-sized inverter drives a 2x inverter at the end of the wire from part a. Suppose that the Al wire capacitance is 0.3 fF/µm and that a unit-sized nMOS transistor has R = 10 kN and C = 0.1 fF. Estimate the propagation delay using the Elmore delay model, neglect diffusion capacitance. c. Find the RC flight time per mm² for the wire from part a. Express the result in FO4/mm², if the FO4 inverter delay is 15 ps. What is the flight time to cross a 10 mm die?

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

See similar textbooks

Similar questions

e. In terms of charge and current, what is the meaning of the time constant t in a charging RC circuit? Hint, the meaning of a % life is the time to reduce something by half.
An integrated circuit or monolithic integrated circuit (also referred to as an IC, a chip, or amicrochip) is a set of 1.................. on one small flat piece (or "chip") of semiconductor material,normally 2. ……………The integration of large numbers of tiny transistors into a small chip results in circuits that areorders of magnitude smaller, cheaper, and faster than those constructed of discrete electroniccomponents. The IC's mass production 3. ………….., reliability and building-block approach tocircuit design has ensured the rapid 4…………. of standardized ICs in place of designs usingdiscrete transistors. ICs are now used in virtually all electronic equipment and haverevolutionized the world of electronics. Computers, mobile phones, and other digital homeappliances are now 5. ………….. parts of the structure of modern societies, made possible by thesmall size and low cost of ICs. Integrated circuits were made practical by mid-20th-century technology 6. …………….…
Calculate the intrinsic carrier concentration of a semiconductor in units of (cm-3). Use the room temperature bandgap and effective density of states. Assume the parameters given below: Semiconductor: Germanium Temperature: 206 (K)
Design an AC / DC converter with a ripple factor less than 5% and using a transformer with a 10:1 ratio, starting at 120 Vrms, and with a load resistance of 500 N. Use a rectifier bridge
i need the answer quickly
There is a p-type semiconductor box. As the voltage at both ends of the box continued to increase, the drift velocity of the holes in the box reached the saturation velocity. After that, if the acceptor doping concentration in this semiconductor box is doubled and the voltage is also doubled, how will the current change in this semiconductor box change? However, it is assumed that the mobility is affected only by impurity scattering. .
INCLUDE ALL THE DECIMALS
A conducting GTO reverts back to the blocking mode when the anode current falls below current. a. cathode b. latching C. anode d. holding
VoO for Ma mosfet Nn Cox ( )= Jm Alv? ,Vrw=0,7V J00NA (+) VX %3D %3D a) In uhat condition does the mosfet work ?and frnd the voltage Vx= ? M1 3V b) what is the mompmum Voo voltage and why'?
Question 2.a An ac power supply with VRMS =240 V and a full-wave rectifier are used to generate a de voltage for a resistive load with resistance value of 100 Q. The filter capacitor connected to the rectifier has capacitance value of 500 µF. The frequency of the ac supply is 50-Hz. Determine the de voltage and ripple factor at load side? а. Question 2.b Assume that by using an RC filter circuit, you wanted to reduce the ripple factor to half the amount that you calculated in part 2.a, answer the following questions: b. What values would you suggest for resistor and capacitor of the RC circuit? What is the voltage regulation of this circuit? с.
A single-phase diode-clamped inverter has m = 5. Find (a) instantaneous, average, and rms currents of each node, and (b) average and rms capacitor current if Vác 50 sin ( 0 – 1/3). 5kV and
4. A MOS-C, p-type semiconductor is Si at 300K, Xo = 0.5 µm and doped with 6 x %3D 15 10/cm and operates under depletion bias. Assume that K, = 11.8 for Si and Ko = 3.9 for Sio?. Calculate the following parameters: (a) Calculate the depletion width (W) (b) Voltage gate (VG). %3D