QUESTION: 1Silicon at T=300K contains a acceptor impurity concentration at Na=1016 cm-3. Determinethe concentration of donor impurity atoms that must be added so that the silicon is n-typeand the Fermi energy is 0.20eV below the conduction band edge. [Take NC=2.8 x 101°cm³].QUESTION:2Two semiconductor materials have exactly the same properties except that material A has aband gap energy of 1.0eV and material B has a band gap energy of 1.2eV. Determine theratio of ni of material A to that of material B for T=30OK.QUESTION:3A special semiconductor material is to be "designed". The semiconductor is to be n-type anddoped with 1 x 1015 cm³ donor atoms. Assume complete ionization and that Na=0. Theeffective density of state functions are given by Nc = Nv =1.5 x 1019 cm3 and areindependent of temperature. A particular semiconductor device fabricated with thismaterial requires the electron concentration to be no greater than 1.01 x 1015 cm³ atT=400K. What is the minimum value of the band gap energy? QUESTION:4A 10k2 resistor is to be designed to handle a current density of 50A/cm? when a 5V isapplied. If this resistor is limited to electric field of E =100 cm²/V-s, calculate:i current passing through the resistorii cross-sectional areaii length of the resistoriv conductivityv carrier concentrationQUESTION: 5Assume that in an n-type Gallium Arsenide semiconductor at 300K, the electronconcentration varies linearly from 1 x 1018 cm-3 to 7 x 1017 cm3 over a distance of 0.01cm.Determine the diffusion current density if the electron diffusion co-efficient is Dn =225cm?/s

Given:- Let the donor concentration = ND cm-3 Acceptor concentration NA =…

KUESTION: 1 Silicon at T=300K contains a acceptor impurity concentration at Na=1016 cm-3. Determine the concentration of donor impurity atoms that must be added so that the silicon is n-type and the Fermi energy is 0.20eV below the conduction band edge. [Take NC=2.8 x 1019cm³].

KUESTION: 1 Silicon at T=300K contains a acceptor impurity concentration at Na=1016 cm-3. Determine the concentration of donor impurity atoms that must be added so that the silicon is n-type and the Fermi energy is 0.20eV below the conduction band edge. [Take NC=2.8 x 1019cm³].

Chemistry

10th Edition

ISBN:9781305957404

Author:Steven S. Zumdahl, Susan A. Zumdahl, Donald J. DeCoste

Publisher:Steven S. Zumdahl, Susan A. Zumdahl, Donald J. DeCoste

Chapter1: Chemical Foundations

Section: Chapter Questions

Problem 1RQ: Define and explain the differences between the following terms. a. law and theory b. theory and...

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