In the three-dimensional view of a silicon n-channel MOS transistorshown below, S = 20 nm. The transistor is of width 1μm. Thedepletion width formed at every p-n junction is 10 nm. The relativepermittivity of Si and SiO2, respectively, are 11.7 and 3.9, andE0 = 8.9 × 10-¹2 F/m0.2μm0.2μmp substrateB•G|1nm0.2μm1um0.2μmThe gate- source overlap capacitance is approximately.1um

The three dimensional view of a silicon n channel MOS transistor isdepletion width of p-n junction

Answered: In the three-dimensional view of a…

Engineering

Electrical Engineering

In the three-dimensional view of a silicon n-channel MOS transistor

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

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Question

In the three-dimensional view of a silicon n-channel MOS transistor
shown below, S = 20 nm. The transistor is of width 1μm. The
depletion width formed at every p-n junction is 10 nm. The relative
permittivity of Si and SiO2, respectively, are 11.7 and 3.9, and
E0 = 8.9 × 10-¹2 F/m
0.2μm
0.2μm
p substrate
B
•G
|1nm
0.2μm
1um
0.2μm
The gate- source overlap capacitance is approximately.
1um

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