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V DD M,(20/1) R R M,(10/1) V V ss Fig 6. Amplifier w/ active load

V DD M,(20/1) R R M,(10/1) V V ss Fig 6. Amplifier w/ active load

Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
Section: Chapter Questions
Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...
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**Assume M1 and M2 are saturated** (a) Find expressions for small signal parameters (b) If the DC current flowing through both transistors is 50 µA, numerically evaluate the expressions found in (a) **Diagram Explanation:** The diagram shows an amplifier with an active load. The key components and connections are as follows: - **M1 and M2 Transistors**: - M1 has a width to length ratio of (10/1). - M2 has a width to length ratio of (20/1). - **Connections**: - Both transistors are shown in a configuration typical for amplifiers where M1 operates as the amplifying transistor and M2 as the load. - V_in is applied to the gate of M1. - V_out is taken between the drain of M1 and the source of M2. - The gate of M2 is connected to its drain, establishing it as a diode-connected transistor. - **Voltage Sources**: - V_DD is the positive supply voltage connected to the source of M2. - V_SS is the negative supply voltage connected to the source of M1. - **Resistors**: - R_in is shown at the gate of M1. - R_load is shown at the output between M1 and M2. **Figure 6: Amplifier with active load**
Transcribed Image Text:**Assume M1 and M2 are saturated** (a) Find expressions for small signal parameters (b) If the DC current flowing through both transistors is 50 µA, numerically evaluate the expressions found in (a) **Diagram Explanation:** The diagram shows an amplifier with an active load. The key components and connections are as follows: - **M1 and M2 Transistors**: - M1 has a width to length ratio of (10/1). - M2 has a width to length ratio of (20/1). - **Connections**: - Both transistors are shown in a configuration typical for amplifiers where M1 operates as the amplifying transistor and M2 as the load. - V_in is applied to the gate of M1. - V_out is taken between the drain of M1 and the source of M2. - The gate of M2 is connected to its drain, establishing it as a diode-connected transistor. - **Voltage Sources**: - V_DD is the positive supply voltage connected to the source of M2. - V_SS is the negative supply voltage connected to the source of M1. - **Resistors**: - R_in is shown at the gate of M1. - R_load is shown at the output between M1 and M2. **Figure 6: Amplifier with active load**
### MOSFET Parameters for NMOS and PMOS This table provides a comparison of key parameters for NMOS and PMOS transistors, essential components in electronic circuits. Understanding these parameters is critical for modeling and designing MOSFET-based circuits. | MOSFET Parameter | NMOS | PMOS | Units | |------------------|------|------|-----------| | K or K’ | 24 | 8 | µA/V² | | Vᵀ₀ | 0.75 | -0.75| V | | γ (Gamma) | 0.8 | 0.4 | V¹/² | | φ (Phi) | 0.6 | 0.6 | V | | λ (Lambda) | 0.01 | 0.02 | V⁻¹ | #### Explanation of Parameters: - **K or K’ (Transconductance Parameter):** This measures the transistor's ability to conduct. Higher values indicate better conduction efficiency. NMOS transistors have a K value of 24 µA/V², while PMOS transistors have a lower value of 8 µA/V². - **Vᵀ₀ (Threshold Voltage):** This is the minimum gate-to-source voltage required to create a conducting path between the source and drain terminals. NMOS has a Vᵀ₀ of 0.75 V, and PMOS has a Vᵀ₀ of -0.75 V, reflecting the polarity difference. - **γ (Gamma, Body Effect Coefficient):** This parameter indicates how the threshold voltage changes with the substrate bias. It is 0.8 V¹/² for NMOS and 0.4 V¹/² for PMOS. - **φ (Phi, Surface Potential):** Represents the voltage potential at the silicon surface and is the same for both NMOS and PMOS at 0.6 V. - **λ (Lambda, Channel-Length Modulation Parameter):** Describes the change in drain current with drain-source voltage due to the shortening of the effective channel length. NMOS transistors have a λ value of 0.01 V⁻¹, whereas PMOS transistors have a value of 0.02 V⁻¹. Understanding these parameters helps in designing precise and efficient electronic circuits using NMOS
Transcribed Image Text:### MOSFET Parameters for NMOS and PMOS This table provides a comparison of key parameters for NMOS and PMOS transistors, essential components in electronic circuits. Understanding these parameters is critical for modeling and designing MOSFET-based circuits. | MOSFET Parameter | NMOS | PMOS | Units | |------------------|------|------|-----------| | K or K’ | 24 | 8 | µA/V² | | Vᵀ₀ | 0.75 | -0.75| V | | γ (Gamma) | 0.8 | 0.4 | V¹/² | | φ (Phi) | 0.6 | 0.6 | V | | λ (Lambda) | 0.01 | 0.02 | V⁻¹ | #### Explanation of Parameters: - **K or K’ (Transconductance Parameter):** This measures the transistor's ability to conduct. Higher values indicate better conduction efficiency. NMOS transistors have a K value of 24 µA/V², while PMOS transistors have a lower value of 8 µA/V². - **Vᵀ₀ (Threshold Voltage):** This is the minimum gate-to-source voltage required to create a conducting path between the source and drain terminals. NMOS has a Vᵀ₀ of 0.75 V, and PMOS has a Vᵀ₀ of -0.75 V, reflecting the polarity difference. - **γ (Gamma, Body Effect Coefficient):** This parameter indicates how the threshold voltage changes with the substrate bias. It is 0.8 V¹/² for NMOS and 0.4 V¹/² for PMOS. - **φ (Phi, Surface Potential):** Represents the voltage potential at the silicon surface and is the same for both NMOS and PMOS at 0.6 V. - **λ (Lambda, Channel-Length Modulation Parameter):** Describes the change in drain current with drain-source voltage due to the shortening of the effective channel length. NMOS transistors have a λ value of 0.01 V⁻¹, whereas PMOS transistors have a value of 0.02 V⁻¹. Understanding these parameters helps in designing precise and efficient electronic circuits using NMOS
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