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Calculate the threshold voltage of an n-channel MOSFET

Calculate the threshold voltage of an n-channel MOSFET

Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
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Calculate Threshold Voltage of n-channel MOSFET

Calculate the threshold voltage of an n-channel MOSFET at room temperature having the following parameters: p-substrate doping level, N.=2x1016 cm, Oxide thickness, to=0.2 um and Source to substrate bias voltage (VsB) = 5 V. [Data given: &, si = 11.9, &, sio2 = 3.9, £0=8.854x1014 F/em, At room Temperature of 300 K: Intrinsic carrier concentration of Si, n=1.45x10" cm³, N=2.8x10" cm³, Na=10!s cm³, Metal gate work fiunction=4.05 eV, Electron affinity of Si= 4.05 eV. Symbols have their usual meaning.]
Transcribed Image Text:Calculate the threshold voltage of an n-channel MOSFET at room temperature having the following parameters: p-substrate doping level, N.=2x1016 cm, Oxide thickness, to=0.2 um and Source to substrate bias voltage (VsB) = 5 V. [Data given: &, si = 11.9, &, sio2 = 3.9, £0=8.854x1014 F/em, At room Temperature of 300 K: Intrinsic carrier concentration of Si, n=1.45x10" cm³, N=2.8x10" cm³, Na=10!s cm³, Metal gate work fiunction=4.05 eV, Electron affinity of Si= 4.05 eV. Symbols have their usual meaning.]
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