In the manufacture of semiconducting thin films, a thin film of solid arsenic is laid down onto the surface of a silicon wafer by the chemical vapor deposition of arsine (AsH3), as 2AsH3(g) ® 2As(s) + 3H2(g). The arsenic atoms then diffuse into the solid silicone to dope the wafer.What is the flux of arsenic atoms into the silicon wafer after 1 h, in units of atoms/cm2 s? What is arsenic concentration 2µm into the silicon wafer after 1 h, in units of atoms/cm3? The initial concentration of residual arsenic in the silicon wafer is 10¹² atoms/cm3. The process temperature is 1050 degrees Celsius. The average diffusivity of arsenic in silicon is 5 ×10ˉ¹³ cm2/s at this temperature, and the maximum solubility of arsenic in silicon is 2×10ˉ²¹ atoms/cm3.
In the manufacture of semiconducting thin films, a thin film of solid arsenic is laid down onto the surface of a silicon wafer by the chemical vapor deposition of arsine (AsH3), as 2AsH3(g) ® 2As(s) + 3H2(g). The arsenic atoms then diffuse into the solid silicone to dope the wafer.What is the flux of arsenic atoms into the silicon wafer after 1 h, in units of atoms/cm2 s? What is arsenic concentration 2µm into the silicon wafer after 1 h, in units of atoms/cm3? The initial concentration of residual arsenic in the silicon wafer is 10¹² atoms/cm3. The process temperature is 1050 degrees Celsius. The average diffusivity of arsenic in silicon is 5 ×10ˉ¹³ cm2/s at this temperature, and the maximum solubility of arsenic in silicon is 2×10ˉ²¹ atoms/cm3.
Introduction to Chemical Engineering Thermodynamics
8th Edition
ISBN:9781259696527
Author:J.M. Smith Termodinamica en ingenieria quimica, Hendrick C Van Ness, Michael Abbott, Mark Swihart
Publisher:J.M. Smith Termodinamica en ingenieria quimica, Hendrick C Van Ness, Michael Abbott, Mark Swihart
Chapter1: Introduction
Section: Chapter Questions
Problem 1.1P
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In the manufacture of semiconducting thin films, a thin film of solid arsenic is laid down onto the surface of a silicon wafer by the chemical vapor deposition of arsine (AsH3), as 2AsH3(g) ® 2As(s) + 3H2(g). The arsenic atoms then diffuse into the solid silicone to dope the wafer.What is the flux of arsenic atoms into the silicon wafer after 1 h, in units of atoms/cm2 s? What is arsenic concentration 2µm into the silicon wafer after 1 h, in units of atoms/cm3? The initial concentration of residual arsenic in the silicon wafer is 10¹² atoms/cm3. The process temperature is 1050 degrees Celsius. The average diffusivity of arsenic in silicon is 5 ×10ˉ¹³ cm2/s at this temperature, and the maximum solubility of arsenic in silicon is 2×10ˉ²¹ atoms/cm3.
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