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In the cleanroom, a SiO2 layer of 2um thick is deposited on a <100 silicon substrate using CVD process. The structure is then oxidized at 950 C for 80 minutes in an H2O ambient. Calculate the thickness of the final oxide layer.

In the cleanroom, a SiO2 layer of 2um thick is deposited on a <100 silicon substrate using CVD process. The structure is then oxidized at 950 C for 80 minutes in an H2O ambient. Calculate the thickness of the final oxide layer.

Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
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In the cleanroom, a SiO2 layer of 2um thick is deposited on a <100 silicon substrate using CVD process. The structure is then oxidized at 950 C for 80 minutes in an H2O ambient. Calculate the thickness of the final oxide layer.
Transcribed Image Text:In the cleanroom, a SiO2 layer of 2um thick is deposited on a <100 silicon substrate using CVD process. The structure is then oxidized at 950 C for 80 minutes in an H2O ambient. Calculate the thickness of the final oxide layer.
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