In the circuit shown the BJT has ẞ= 100, Vee = 0.7 V, and Vcesat = 0.2 V. As long as the BJT remains in the active region, the circuit provides constant lo, which is only dependent on Ves. For Ves=2 V and Ra = 13 K Ohms, A) find lo for Re = 0, and B) find lo for Re 100 Ohms. C) For Re = 100 Ohms, find the lowest Vcc before the BJT saturates. LY
In the circuit shown the BJT has ẞ= 100, Vee = 0.7 V, and Vcesat = 0.2 V. As long as the BJT remains in the active region, the circuit provides constant lo, which is only dependent on Ves. For Ves=2 V and Ra = 13 K Ohms, A) find lo for Re = 0, and B) find lo for Re 100 Ohms. C) For Re = 100 Ohms, find the lowest Vcc before the BJT saturates. LY
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
Transcribed Image Text:In the circuit shown, the BJT (Bipolar Junction Transistor) has the following parameters:
- Current gain, \( \beta = 100 \)
- Base-emitter voltage, \( V_{BE} = 0.7 \, \text{V} \)
- Saturation voltage, \( V_{CEsat} = 0.2 \, \text{V} \)
As long as the BJT remains in the active region, the circuit provides constant \( I_0 \), which is only dependent on \( V_{BB} \). For \( V_{BB} = 2 \, \text{V} \) and \( R_B = 13 \, \text{K Ohms} \):
A) Find \( I_0 \) for \( R_E = 0 \).
B) Find \( I_0 \) for \( R_E = 100 \, \text{Ohms} \).
C) For \( R_E = 100 \, \text{Ohms} \), find the lowest \( V_{CC} \) before the BJT saturates.
**Diagram Explanation:**
The diagram shows a simple BJT circuit. Key components include:
- A resistor \( R_B = 13 \, \text{K Ohms} \) connected to the base of the transistor.
- An input voltage \( V_{BB} = 2 \, \text{V} \) applied alongside \( R_B \).
- The collector is connected to \( V_{CC} \), the supply voltage.
- The emitter is connected to \( R_E \), which varies.
- \( I_0 \) is the current flowing through the collector from \( V_{CC} \).
The objective is to determine the effects of \( R_E \) and \( V_{CC} \) on the circuit behavior, particularly \( I_0 \) and saturation conditions.
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