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1. A Si diode has a reverse saturation current of 2.5uA at 300°K. find forward voltage for a forward current of 10mA

1. A Si diode has a reverse saturation current of 2.5uA at 300°K. find forward voltage for a forward current of 10mA

Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
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  1. A Si diode has a reverse saturation current of 2.5uA at 3000 find forward voltage for a forward current of 10mA
1. A Si diode has a reverse saturation current of 2.5uA at 300°K. find forward voltage for a forward current of 10mA 2. = 4 KO, RE = 1 KO, R1 =20 KO For a Transistor voltage-divider bias circuit given Vcc 10V, Rc 4 ΚΩ, 1 ΚΩ, Ri -20 KΩ and R2 =25 KO. Transistor of Germanium type with a = 1. Determine the stability factor S. 3. In an NPN transistor emitter is grounded, base is connected with 4Volts supply in series with 2KQ resistor and collector base is grounded with 4 Volts supply in series with 2KO. Assume Vcc=12 Volts, VBE=0.7 Volts, B=100. Find IB, lc and lĘ. 4. An ac supply of 230V is applied to a HWR through a turn's ratio of 10:1. Assume RF100, RL=1000. Find the y, n, TUF, PF, PIV? 5. A sinusoidsl voltage of 40V and frequency 50HZ is appled to a HWR with R. L=2002, R 202, R00. Find all rectifier parameters. 6. Calculate the ripple factor of a PI type (CLC filter) employing 10H choke and two equal capacitors of 16micro farad each and fed from full wave rectifier and 50HZ mains. The load resistance is 4Kohm. 7. Determine the Q-point in collector feedback bias for the circuit having B=50, VCc=10V, Rc=2KQ, RB=100KO, VBE-0V. 8. Determine the diffusion capacitance due to holes in a Ge diode when forward bias current is I-26mA.given the mean life time of hole is 20uS at T-300K 9. Design a N-section or CLC filter for a full wave rectifier with the values of output dc voltage of 10 V and a load current of 150 mA and to have a ripple factor of 1 %. 10. A silicon PN diode has reverse saturation current of 20 µA at temperature 20°C. Calculate its reverse saturation current at 60°C.
Transcribed Image Text:1. A Si diode has a reverse saturation current of 2.5uA at 300°K. find forward voltage for a forward current of 10mA 2. = 4 KO, RE = 1 KO, R1 =20 KO For a Transistor voltage-divider bias circuit given Vcc 10V, Rc 4 ΚΩ, 1 ΚΩ, Ri -20 KΩ and R2 =25 KO. Transistor of Germanium type with a = 1. Determine the stability factor S. 3. In an NPN transistor emitter is grounded, base is connected with 4Volts supply in series with 2KQ resistor and collector base is grounded with 4 Volts supply in series with 2KO. Assume Vcc=12 Volts, VBE=0.7 Volts, B=100. Find IB, lc and lĘ. 4. An ac supply of 230V is applied to a HWR through a turn's ratio of 10:1. Assume RF100, RL=1000. Find the y, n, TUF, PF, PIV? 5. A sinusoidsl voltage of 40V and frequency 50HZ is appled to a HWR with R. L=2002, R 202, R00. Find all rectifier parameters. 6. Calculate the ripple factor of a PI type (CLC filter) employing 10H choke and two equal capacitors of 16micro farad each and fed from full wave rectifier and 50HZ mains. The load resistance is 4Kohm. 7. Determine the Q-point in collector feedback bias for the circuit having B=50, VCc=10V, Rc=2KQ, RB=100KO, VBE-0V. 8. Determine the diffusion capacitance due to holes in a Ge diode when forward bias current is I-26mA.given the mean life time of hole is 20uS at T-300K 9. Design a N-section or CLC filter for a full wave rectifier with the values of output dc voltage of 10 V and a load current of 150 mA and to have a ripple factor of 1 %. 10. A silicon PN diode has reverse saturation current of 20 µA at temperature 20°C. Calculate its reverse saturation current at 60°C.
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