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In a transistor circuit given determine IB, IC, IE, VCE, αdc and VBC.
Neglect VBE, take β=100
1.VBB=10V,Vcc=15v,Rc=10k,Rb=1M,
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- +15 V 1) In the circuit to the right, for what range of resistances Rc Rc will the transistor be saturated? Assume ß = 100. VBE = 0.6V, VCe = 0.2V 10 k?1) A Si p-n-p transistor has the following properties at room temperature: Tn = Tp 0.1 us NE 1019 сті Emitter concentration — 10 ст2/s -3 Dn = Dp NB 3D 1016 ст Base concentration Nc 1019 ст -3 = Collector concentration WE 3 µm Emitter width W 1.5 um Metallurgical base width, i.e. the distance between base-emitter junction and base-collector junction A = 10-5 cm² = Cross-sectional area If VCB = 0 V and VEB = 0.6 V, calculate the following: ЕВ a) Neutral base width (WB) b) Base transport factor c) Emitter injection efficiency d) a, ß and y. e) Ic, Ig and Ig.What is the minimum saturation voltage of a power transistor having βR = 0.05 and operating at a junction temperature of 150◦C?
