(h) A MOSFET in saturation is characterised by the following expression for the drain-sourcecurrent where VGS is the gate-source voltage, K is a scalar constant and Vr is the MOSFETthreshold voltage:Kips =(Ves(Vas –V7)²2Which of the following expressions corresponds to the MOSFET's small signaltransconductance, gm = ids /Vds in terms of the MOSFET's large signal (DC) gate-source voltage,VGs?(A) gm=0.5 K (VGs -Vr)(B) gm= 0.5 K (VGs+Vr)(C) gm= K (VGs -Vr)(D) gm= K (VGs -Vr)

In this question we have to find out transconductance in terms of gate to source voltage and MOSFET…

(h) A MOSFET in saturation is characterised by the following expression for the drain-source current where VGS is the gate-source voltage, K is a scalar constant and Vr is the MOSFET threshold voltage: K ins = -(Vas -V, )² Which of the following expressions corresponds to the MOSFET's small signal transconductance, gm = ids /vds in terms of the MOSFET's large signal (DC) gate-source voltage, VGs? (A) gm=0.5 K (VGs -Vr) (B) gm= 0.5 K (VGs+Vr) (C) gm= K (VGs -Vr) (D) gm= K (VGs -Vr)

(h) A MOSFET in saturation is characterised by the following expression for the drain-source current where VGS is the gate-source voltage, K is a scalar constant and Vr is the MOSFET threshold voltage: K ins = -(Vas -V, )² Which of the following expressions corresponds to the MOSFET's small signal transconductance, gm = ids /vds in terms of the MOSFET's large signal (DC) gate-source voltage, VGs? (A) gm=0.5 K (VGs -Vr) (B) gm= 0.5 K (VGs+Vr) (C) gm= K (VGs -Vr) (D) gm= K (VGs -Vr)

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

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