- Given the BJT transistor characteristics of Fig 4. (a) Draw a load line on the characteristics determined by E= 21 V and Re= 3 kN for a fixed- bias configuration. (b) Choose an operating point midway between cutoff and saturation. Determine the value of R to establish the resulting operating point. (c) What are the resulting values of Ie, and le,?

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*5. Given the BJT transistor characteristics of Fig 4.76:
(a) Draw a load line on the characteristics determined by E = 21 V and R = 3 kN for a fixed-
bias configuration.
(b) Choose an operating point midway between cutoff and saturation. Determine the value of
Rg to establish the resulting operating point.
(c) What are the resulting values of le, and l'er?
(d) What is the value of Bat the operating point?
(e) What is the value of a defined by the operating point?
() What is the saturation (lc) current for the design?
(g) Sketch the resulting fixed-bias configuration.
(h) What is the de power dissipated by the device at the operating point?
O What is the power supplied by F'ec?
O Determine the power dissipated by the resistive elements by taking the difference between
the results of parts (h) and (i).
Chapter 4 DC Biasing-BJTS
110 MA
100 LA
10
90 HA
80 HA
70 uA
50 uA
40 HA
30 A
20 HA
10 A
10
15
20
25
30
Figure 4.76 Problems 5, 10, 19, 35, 36
Transcribed Image Text:*5. Given the BJT transistor characteristics of Fig 4.76: (a) Draw a load line on the characteristics determined by E = 21 V and R = 3 kN for a fixed- bias configuration. (b) Choose an operating point midway between cutoff and saturation. Determine the value of Rg to establish the resulting operating point. (c) What are the resulting values of le, and l'er? (d) What is the value of Bat the operating point? (e) What is the value of a defined by the operating point? () What is the saturation (lc) current for the design? (g) Sketch the resulting fixed-bias configuration. (h) What is the de power dissipated by the device at the operating point? O What is the power supplied by F'ec? O Determine the power dissipated by the resistive elements by taking the difference between the results of parts (h) and (i). Chapter 4 DC Biasing-BJTS 110 MA 100 LA 10 90 HA 80 HA 70 uA 50 uA 40 HA 30 A 20 HA 10 A 10 15 20 25 30 Figure 4.76 Problems 5, 10, 19, 35, 36
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