Given a Si sample of unknown doping, Hall measurement has been made and thefollowing information obtained: W = 0.05 cm, A = 1.6 x 10-3 cm2, I = 2.5 mA, and the magnetic field is 30 nT (1T = 104 Wb/cm2 ). If a Hall voltage of +10 mV is measured, find the Hall coefficient, conductivity type, majority carrier concentration, resistivity, and mobility of the semiconductor sample.
Given a Si sample of unknown doping, Hall measurement has been made and thefollowing information obtained: W = 0.05 cm, A = 1.6 x 10-3 cm2, I = 2.5 mA, and the magnetic field is 30 nT (1T = 104 Wb/cm2 ). If a Hall voltage of +10 mV is measured, find the Hall coefficient, conductivity type, majority carrier concentration, resistivity, and mobility of the semiconductor sample.
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Given a Si sample of unknown doping, Hall measurement has been made and thefollowing information obtained: W = 0.05 cm, A = 1.6 x 10-3 cm2, I = 2.5 mA, and the
magnetic field is 30 nT (1T = 104 Wb/cm2
). If a Hall voltage of +10 mV is measured, find
the Hall coefficient, conductivity type, majority carrier concentration, resistivity, and mobility of the semiconductor sample.
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