Given a heterostructure interface (e.g. two n-type semiconductors), show how the energyband structure changes near the interface once they are attached and equilibrium isobtained. Why does this happen in terms of electron motion, “built-in” potential, maintainingband gap energy and electron affinity?

Given a heterostructure interface (e.g. two n-type semiconductors), show how the energyband structure changes near the interface once they are attached and equilibrium isobtained. Why does this happen in terms of electron motion, “built-in” potential, maintainingband gap energy and electron affinity?

Modern Physics

3rd Edition

ISBN:9781111794378

Author:Raymond A. Serway, Clement J. Moses, Curt A. Moyer

Publisher:Raymond A. Serway, Clement J. Moses, Curt A. Moyer

Chapter12: The Solid State

Section: Chapter Questions

Problem 2Q

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