For an n-channel JFET having device parameters IDSS= (12 + 0.2 × 80 ) mA and VP= -8V: Sketch the transfer characteristics using shorthand method. Sketch the drain characteristics from the transfer characteristics. (You must draw 4 curves each of which corresponding to one point on the transfer characteristics curve.) Determine the maximum value of gm. Determine the value of gm at VGS= -4V.
For an n-channel JFET having device parameters IDSS= (12 + 0.2 × 80 ) mA and VP= -8V: Sketch the transfer characteristics using shorthand method. Sketch the drain characteristics from the transfer characteristics. (You must draw 4 curves each of which corresponding to one point on the transfer characteristics curve.) Determine the maximum value of gm. Determine the value of gm at VGS= -4V.
Introductory Circuit Analysis (13th Edition)
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ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
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For an n-channel JFET having device parameters IDSS= (12 + 0.2 × 80 ) mA and VP= -8V:
- Sketch the transfer characteristics using shorthand method.
- Sketch the drain characteristics from the transfer characteristics. (You must draw 4 curves each of which corresponding to one point on the transfer characteristics curve.)
- Determine the maximum value of gm.
Determine the value of gm at VGS= -4V.
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