For a particular semiconductor sample, hole concentration po = 1013e¬*/Lr cm³ for x 2 0, Lp = 2 × 10-3 cm; electron concentration n, = 2 x 1014e-*/Ln cm³ for x 2 0, Ln = 1 × 10-4 cm; D, = 20cm; D, = 10ª cm2 . The total current density at x = 0 and x = 1 µm respectively %3D are
For a particular semiconductor sample, hole concentration po = 1013e¬*/Lr cm³ for x 2 0, Lp = 2 × 10-3 cm; electron concentration n, = 2 x 1014e-*/Ln cm³ for x 2 0, Ln = 1 × 10-4 cm; D, = 20cm; D, = 10ª cm2 . The total current density at x = 0 and x = 1 µm respectively %3D are
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
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Transcribed Image Text:For a particular semiconductor sample,
hole concentration p, = 1013e¬x/Lr cm³ for x 2 0, Lp = 2 × 10-3 cm;
electron concentration n, = 2 x 1014e-*/Ln cm³ for x 2 0, Ln = 1 × 10-4 cm;
D, = 20 ; Dn = 10 ". The total current density at x = 0 and x = 1 µm respectively
cm?
cm?
are
0.65 A/cm² and 3 A/cm?
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