For a p-substrate silicon n-MOS capacitor at T=300 K, the substrate doping is NA= 4.25×10^16/cm 3 . The value of ni at T=300 K is 1.5×10^10/cm 3 . (I) What is bulk potential φB ? (ii) When the surface is inverted, what is the total surface band bending φs? (iii)  For φm= 4.36 eV and X=4.01 eV, what is the flat band voltage VFB? (iv) Find the maximum depletion width xDT (μm) when the surface is inverted.

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For a p-substrate silicon n-MOS capacitor at T=300 K, the substrate doping is NA= 4.25×10^16/cm 3 . The value of ni at T=300 K is 1.5×10^10/cm 3 .

(I) What is bulk potential φB ?
(ii) When the surface is inverted, what is the total surface band bending φs?
(iii)  For φm= 4.36 eV and X=4.01 eV, what is the flat band voltage VFB?
(iv) Find the maximum depletion width xDT (μm) when the surface is inverted.



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