Homework Help is Here – Start Your Trial Now!
Science
Advanced Physics
Fon capacitance at zero bias i acitance was measured to be

Fon capacitance at zero bias i acitance was measured to be

icon
Related questions
Question

solve all necessary

3. Use this information to answer Question 3-5: Consider a step pn junction made of GaAs at T= 300 K. The junction capacitance at zero bias is C(0) and the capacitance with a 10 V reverse bias is C(10). The ratio of the capacitance was measured to be C(0)/C(10) = 3.13. Find the built-in potential in unit of V. Specify your answer up to 4 digits below the decimal point in order to avoid numeric answer propagation in the following problems. Enter answer here The depletion region width on the p-side, p, was found to be 20% of the entire depletion region width, Ip. Find the doping density, NA in the p-side in unit of cm 3. Enter answer here Find the doping density, Np in the n-side in unit of cm. Enter answer here
Transcribed Image Text:3. Use this information to answer Question 3-5: Consider a step pn junction made of GaAs at T= 300 K. The junction capacitance at zero bias is C(0) and the capacitance with a 10 V reverse bias is C(10). The ratio of the capacitance was measured to be C(0)/C(10) = 3.13. Find the built-in potential in unit of V. Specify your answer up to 4 digits below the decimal point in order to avoid numeric answer propagation in the following problems. Enter answer here The depletion region width on the p-side, p, was found to be 20% of the entire depletion region width, Ip. Find the doping density, NA in the p-side in unit of cm 3. Enter answer here Find the doping density, Np in the n-side in unit of cm. Enter answer here
Expert Solution
steps

Step by step

Solved in 2 steps with 15 images

SEE SOLUTIONCheck out a sample Q&A here
Blurred answer