Figure 2.1 shows the circuit diagram of a simple npn BJT common emitter amplifier. Explain the role of resistive element Rg in this circuit. How by modifying the circuit topology could that role be strengthened? +Vcc 2 Rc M₁² Figure 2.1 w -

Figure 2.1 shows the circuit diagram of a simple npn BJT common emitter amplifier. Explain the role of resistive element Rg in this circuit. How by modifying the circuit topology could that role be strengthened? +Vcc 2 Rc M₁² Figure 2.1 w -

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

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Consider the common emitter BJT amplifier shown in Figure 3.1. The input voltage v1 comprises the sum of a DC bias voltage V₁ = 0.7V and a sinusoid of the form v₁ = A sin wt, where A = 0.001V. For the values shown, you may assume that A is very small compared to V₁. You may further assume that the BJT always operates in its active region. Figure 3.2 shows a small signal model for the BJT operating in its active region. Let the output voltage vo comprise a DC bias term Vo and a small-signal response term Vo. B iB VBE (a) BJT ¹E E 0.001 V sin(cor) VCE 0.7 V Figure 3.1 www Figure 3.2 15 V 100 ΚΩ wwwB 100 50 ΚΩ vo B ib Bib E (b) BJT small signal model a) Determine the output operating point voltage Vo for the input bias of V₁ = 0.7V. b) Draw the small signal equivalent circuit for the amplifier. c) Determine the small signal gain of the amplifier. d) What is the value of vo, the small signal component of the output, given the small signal input shown in Figure 3.1.
Question 1.1 (correcta) In the case of the circuit shown, it is a resistance that increases in value with increasing temperature. This type of thermistors are of the PTC (Positive Temperature Coefficient) type. Transistor Q1 is an N-channel enrichment MOSFET model HB-NR066, which has a threshold voltage VT= 3V, and turn-on values ID (on)= 10 mA and VGS(on)= 7V. The circuit It is used as a temperature-to-voltage converter for an industrial process, since the output voltage Vo changes with temperature. From the above, develop the following points.a) If it is known that at a temperature 50 degrees Celsius the value of the thermistor is RT= 5k Ω find the operating point of the transistor for this temperature, as well as the output Vo. Also, perform the necessary calculations to verify that Q1 is in the saturation zone.
Q2. a) In a Bipolar Transistor define the quantity a or hFB. How is the device structure of the npn Bipolar Transistor designed to maximize this quantity?
Discuss the significant different between the construction of an E-MOSFET and a D-MOSFET.
Q4. For the circuit shown in Figure Q4: i) What is the type of MOSFET and the amplifier configuration? ii) Find the Q-point (Ip and Vps) iii) What is the device transconductance, gm? iv) What are the voltage gain and output voltage? v) Draw the input /output voltage waveforms showing the phase relationship between them. Be sure to label them properly. +20V IDON = 15 mA@ VcsON = 6V VGSTH = 1V 1kQ Rp C2 10M2 Ro1 out Vin 3.3MQ Ra, 47003 Rs 50mV Figure Q4
"Bias voltage applied to the emitter electrode of a transistor offers greater stability over bias toward its base." Why? How does that actually work? My professor wants a detailed, engineering level explanation for this, and I am struggling to understand this to the degree he is asking. He says having both a positive and negative voltage source at the emitter bias is not necessary, and won't accept this as part of the explanation. Thanks!
b) For correct operation as an ac amplifier a npn BJT must be correctly DC biased to establish an appropriate Q-point, i.e a negative voltage VBC between the base and collector terminals and a positive voltage VBE between the base and emitter terminals. Figure 3.1 shows a circuit that can achieve this requirement. Explain the role of each resistive element in this circuit. Vin RB1 Cin HH iin RB2 + Rc VB RE + Vcc Vc Cout VE ww 11 Figure 3.1 th Vout Ce İout
Discuss High level modulator: circuit diagram and operation - Collector modulator
c) Figure 2.3 shows the circuit diagram of a typical npn BJT common emitter amplifier. The values of RB1-30 kOhm, RB2=10.XY kOhm, Rc-3.XY kOhm, Ic=2.XY mA and Vcc=24 V. If the transistor current gain 3 = 50 determine using the full analysis and assuming VBE = 0.7 V the value of RE, hence identify the location of the Q-point (Ic, VCE, IB and VBE). Now sketch the AC circuit model of this amplifier and determine the value of the ac open circuit voltage gain Av and the ac short circuit current gain Ai. (Assume that Vth = 26 mV). Vin RB1 Cin lin RB2 -10 Rc VB RE + Vcc Vc Cout VE www li Figure 2.3 Vout Ce ¡out x=1 y=7
An enhancement type N-MOSFET with VT = 2 V that conducts a current ID = 5 mA for VGS = 4 V and VDS = 5 V. What is the value of ID for VGS = 3 V and VDS = 6 V?
Figure 2. illustrates a transistor amplifier implemented with a transistor (we can use PN2222 data here) and two resistors, which receives the operating voltage from a 10 V voltage source. Current gain of the npn- transistor ß=hFE = 100. Calculate a) base current IB b) collector current, Ic c) collector-emitter-voltage UCE d) determine in which state the transistor is operating (saturation, cut off, active) RB IB Rc Ic +il+ Vcc Figure 2. Npn - transistor connection. RB-300 kn, Rc-2k2, Vcc= 10 V.
Complete the given BJT circuit. Solve for the value of the resistors and the voltage supply that will satisfy the given DC loadline. Assume IC=IE and RC=RE. Show and label properly the required final circuit. 5 mA 2.5 mA * IC IC 0 15 V 30V VCE RB B +VCC C E RC B=100 RE ...