Using the characteristics of Figure Q1, determine the following for an emitter-bias if a Q-point is defined at Ico=4 mA and VCEQ = 10 V. configuration (1) (ii) (iii) (iv) 10 9 8 7 6 4 3 2 1 Reif Vcc=24 V and Rg = 1.2 k. B at the operating point. RB. Power dissipated by the transistor. Power dissipated by the resistor Rc. Ic (mA) 5 10 110 μA 100 μετ 15 90 μA 80 μ.Χ. 70 μA 60 μA 20 Figure Q1 50 μA 40 μA 30 με 25 20 μA 10 με B=0μA 30 VCE (V)
Using the characteristics of Figure Q1, determine the following for an emitter-bias if a Q-point is defined at Ico=4 mA and VCEQ = 10 V. configuration (1) (ii) (iii) (iv) 10 9 8 7 6 4 3 2 1 Reif Vcc=24 V and Rg = 1.2 k. B at the operating point. RB. Power dissipated by the transistor. Power dissipated by the resistor Rc. Ic (mA) 5 10 110 μA 100 μετ 15 90 μA 80 μ.Χ. 70 μA 60 μA 20 Figure Q1 50 μA 40 μA 30 με 25 20 μA 10 με B=0μA 30 VCE (V)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
Section: Chapter Questions
Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...
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Step 1
Given that:
- Emitter bias configuration has a Q point at ICQ=4 mA and VCEQ=10 V.
- A graph is shown.
Find:
- If VCC=24 V and RE=1.2 k-ohm then find RC.
- β at the operating point.
iii. RB
iv. Power dissipation of Q1.
v. The power dissipated by RC.
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