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Evaluate the average gate capacitance of, and power dissipated by, a processor with the following properties: • Gate oxide thickness = 1.4 nm• Gate length = 65 nm• Gate area = (65 nm)x(65 nm)• Permittivity of free space = 8.85 x 10e−12 Farads/m • Relative permittivity of SiO2 = 3.9 • Rail-to-rail voltage = 1.1 V• Clock frequency = 3.6 GHz• Switching probability = 1.0• Number of transistors per die = 1.3 x 10e9

Evaluate the average gate capacitance of, and power dissipated by, a processor with the following properties: • Gate oxide thickness = 1.4 nm• Gate length = 65 nm• Gate area = (65 nm)x(65 nm)• Permittivity of free space = 8.85 x 10e−12 Farads/m • Relative permittivity of SiO2 = 3.9 • Rail-to-rail voltage = 1.1 V• Clock frequency = 3.6 GHz• Switching probability = 1.0• Number of transistors per die = 1.3 x 10e9

Computer Networking: A Top-Down Approach (7th Edition)
Computer Networking: A Top-Down Approach (7th Edition)
7th Edition
ISBN:9780133594140
Author:James Kurose, Keith Ross
Publisher:James Kurose, Keith Ross
Chapter1: Computer Networks And The Internet
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Problem R1RQ: What is the difference between a host and an end system? List several different types of end...
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Evaluate the average gate capacitance of, and power dissipated by, a processor with the following properties:

• Gate oxide thickness = 1.4 nm
• Gate length = 65 nm
• Gate area = (65 nm)x(65 nm)
• Permittivity of free space = 8.85 x 10e−12 Farads/m • Relative permittivity of SiO2 = 3.9

• Rail-to-rail voltage = 1.1 V
• Clock frequency = 3.6 GHz
• Switching probability = 1.0
• Number of transistors per die = 1.3 x 10e9

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