Electronic semi conductor In a direct band gap semiconductor quantum well of 10 nm thickness surrounded with infinite barriers, an electron transition from the first excited state in the conduction band to the first excited state in the valence band is associated with a photon of frequency 1e+014 Hz. Determine the semiconductor quantum well energy gap, assume me/m, = 0.06 and m,"/m, 0.4.

Chemistry
10th Edition
ISBN:9781305957404
Author:Steven S. Zumdahl, Susan A. Zumdahl, Donald J. DeCoste
Publisher:Steven S. Zumdahl, Susan A. Zumdahl, Donald J. DeCoste
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Problem 1RQ: Define and explain the differences between the following terms. a. law and theory b. theory and...
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Electronic semi conductor
In a direct band gap semiconductor
quantum well of 10 nm thickness
surrounded with infinite barriers, an
electron transition from the first excited
state in the conduction band to the first
excited state in the valence band is
associated with a photon of frequency
1e+014 Hz. Determine the
semiconductor quantum well energy
gap, assume me/m, = 0.06 and m,"/m, =
0.4.
%3D
Transcribed Image Text:Electronic semi conductor In a direct band gap semiconductor quantum well of 10 nm thickness surrounded with infinite barriers, an electron transition from the first excited state in the conduction band to the first excited state in the valence band is associated with a photon of frequency 1e+014 Hz. Determine the semiconductor quantum well energy gap, assume me/m, = 0.06 and m,"/m, = 0.4. %3D
: Si, Ge, GaAs Parameters and Universal Constants
UNIVERSAL CONSTANTS
Properties
SEMICONDUCTOR
-34
h
6.63 x 10
J.s
Si
Ge
GaAs
-31
mo
9.11 x 10
Kg
Eg (eV)
n; (cm-3)
Un (cm²/V – s)
Hp (cm2/V – s)
N. (cm-3)
N (cm-3)
m:/m.
1.1
0.67
1.42
3.14
1.5 x 1010
2.3 x 1013
1.8 x 106
19
1.602 x 10
8.85 x 10
1500
3900
8500
12
F/m
450
1900
400
-34
J-8
1.05 x 10
8.6 x 10-5 eV/K
2.78 x 1019| 1.04 × 1019 | 4.45 x 1017
K
9.84 x 1018
6 x 1018
7.72 x 1018
KT/q
26 mV (T %3 300 К)
26 meV (T = 300 K)
3 x 10% m/s
0.082
0.98
0.067
KT
%3D
m/m.
Er (F/m)
0.28
0.49
0.45
11.7
16
13.1
nair
= 1
NGGAS = 3.66
Some useful relations
EGALG41-,As(x) = 1.424 + 1.247x
EgIn,Ga-,As(x) = 0.36 + 1.064x
1 eV = 1.602 x 10-19 J
1 KG = 1 × 10-5 Wb/cm²
Transcribed Image Text:: Si, Ge, GaAs Parameters and Universal Constants UNIVERSAL CONSTANTS Properties SEMICONDUCTOR -34 h 6.63 x 10 J.s Si Ge GaAs -31 mo 9.11 x 10 Kg Eg (eV) n; (cm-3) Un (cm²/V – s) Hp (cm2/V – s) N. (cm-3) N (cm-3) m:/m. 1.1 0.67 1.42 3.14 1.5 x 1010 2.3 x 1013 1.8 x 106 19 1.602 x 10 8.85 x 10 1500 3900 8500 12 F/m 450 1900 400 -34 J-8 1.05 x 10 8.6 x 10-5 eV/K 2.78 x 1019| 1.04 × 1019 | 4.45 x 1017 K 9.84 x 1018 6 x 1018 7.72 x 1018 KT/q 26 mV (T %3 300 К) 26 meV (T = 300 K) 3 x 10% m/s 0.082 0.98 0.067 KT %3D m/m. Er (F/m) 0.28 0.49 0.45 11.7 16 13.1 nair = 1 NGGAS = 3.66 Some useful relations EGALG41-,As(x) = 1.424 + 1.247x EgIn,Ga-,As(x) = 0.36 + 1.064x 1 eV = 1.602 x 10-19 J 1 KG = 1 × 10-5 Wb/cm²
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