AN-channel silicon (EG-1.1 eV) MOSFET was fabricated using N Polysilicon gate and the threshold voltage was found to be 1 V. Now, if the gate is changed to P* Polysilicon, other things remaining same, the new threshold voltage should be O 2.3 V O 2.1 V O2V O 2.2 V

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AN-channel silicon (EG=1.1 eV) MOSFET was fabricated using N* Polysilicon gate and the threshold voltage
was found to be 1 V. Now, if the gate is changed to P Polysilicon, other things remaining same, the new
threshold voltage should be
O 2.3 V
O 2.1 V
O2v
2.2 V
Transcribed Image Text:AN-channel silicon (EG=1.1 eV) MOSFET was fabricated using N* Polysilicon gate and the threshold voltage was found to be 1 V. Now, if the gate is changed to P Polysilicon, other things remaining same, the new threshold voltage should be O 2.3 V O 2.1 V O2v 2.2 V
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