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Dse this Information to answer Question 1-3 Consider a contact between gold and n-type silicon doped with Np = 1 x 105em3. The work function of gold is PAu = 4.8 V and the electron affinity of silicon is Xsi = 4.05 V. T= 300 K. Calculate the barrier height, oB, in unit of V. Answers within 5% error will be considered correct. 0.75 2. Calculate depletion region width, zp, in unit of um. Answers within 5% error will be considered correct. 0.792 3. Calculate maximum electric field, Emaz, in unit of V/em. Answers within 5% error will be considered correct. 1.22e+3

Dse this Information to answer Question 1-3 Consider a contact between gold and n-type silicon doped with Np = 1 x 105em3. The work function of gold is PAu = 4.8 V and the electron affinity of silicon is Xsi = 4.05 V. T= 300 K. Calculate the barrier height, oB, in unit of V. Answers within 5% error will be considered correct. 0.75 2. Calculate depletion region width, zp, in unit of um. Answers within 5% error will be considered correct. 0.792 3. Calculate maximum electric field, Emaz, in unit of V/em. Answers within 5% error will be considered correct. 1.22e+3

Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
Section: Chapter Questions
Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...
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I only need a correct answer on number 3. I'm already done on 1 and 2 so please answer it correctly.

1. Use this information to answer Question 1-3: Consider a contact between gold and n-type silicon doped with Np = 1 x 10Pem. The work function of gold is PAu = 4.8 V and the electron affinity of silicon is Xsi = 4.05 V. T= 300 K. Calculate the barrier height, ØB. in unit of V. Answers within 5% error will be considered correct. 0.75 2. Calculate depletion region width, zD, in unit of um. Answers within 5% error will be considered correct. 0.792 3. Calculate maximum electric field, E maz. in unit of V/em. Answers within 5% error will be considered correct. 1.22e+3
Transcribed Image Text:1. Use this information to answer Question 1-3: Consider a contact between gold and n-type silicon doped with Np = 1 x 10Pem. The work function of gold is PAu = 4.8 V and the electron affinity of silicon is Xsi = 4.05 V. T= 300 K. Calculate the barrier height, ØB. in unit of V. Answers within 5% error will be considered correct. 0.75 2. Calculate depletion region width, zD, in unit of um. Answers within 5% error will be considered correct. 0.792 3. Calculate maximum electric field, E maz. in unit of V/em. Answers within 5% error will be considered correct. 1.22e+3
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