Dse this Information to answer Question 1-3 Consider a contact between gold and n-type silicon doped with Np = 1 x 105em3. The work function of gold is PAu = 4.8 V and the electron affinity of silicon is Xsi = 4.05 V. T= 300 K. Calculate the barrier height, oB, in unit of V. Answers within 5% error will be considered correct. 0.75 2. Calculate depletion region width, zp, in unit of um. Answers within 5% error will be considered correct. 0.792 3. Calculate maximum electric field, Emaz, in unit of V/em. Answers within 5% error will be considered correct. 1.22e+3
Dse this Information to answer Question 1-3 Consider a contact between gold and n-type silicon doped with Np = 1 x 105em3. The work function of gold is PAu = 4.8 V and the electron affinity of silicon is Xsi = 4.05 V. T= 300 K. Calculate the barrier height, oB, in unit of V. Answers within 5% error will be considered correct. 0.75 2. Calculate depletion region width, zp, in unit of um. Answers within 5% error will be considered correct. 0.792 3. Calculate maximum electric field, Emaz, in unit of V/em. Answers within 5% error will be considered correct. 1.22e+3
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
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I only need a correct answer on number 3. I'm already done on 1 and 2 so please answer it correctly.
Transcribed Image Text:1. Use this information to answer Question 1-3:
Consider a contact between gold and n-type silicon doped with Np = 1 x 10Pem. The work function of gold is
PAu = 4.8 V and the electron affinity of silicon is Xsi = 4.05 V. T= 300 K.
Calculate the barrier height, ØB. in unit of V.
Answers within 5% error will be considered correct.
0.75
2. Calculate depletion region width, zD, in unit of um.
Answers within 5% error will be considered correct.
0.792
3. Calculate maximum electric field, E maz. in unit of V/em.
Answers within 5% error will be considered correct.
1.22e+3
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