Draw a Common emitter pnp transistor operating in the cut off mode

Consider a silicon pn junction at T = 300 K Assume the doping concentration in then region is 102cm and the doping concentration in the pregion is 1ore and assume that a forward bias of 0.30 V is applied to the pn junction. Nate/ n = 5 ×10 Calculate the minority carrier concentration at the edge of the space charge regions.

A region of N-type semiconductor doped by Nd=10^15 cm^-3 is fully depleted of both majority and minority carriers by an external electric field. Assuming that the concentration of electron-hole pairs that is generated per unit time does not change when the semiconductor is depleted, determine the effective generation rate if the semiconductor is (a) Si (ni = 1.02 × 1010 cm-3) and (b) GaAs (ni = 2.1 × 106 cm-3). The minority-carrier lifetime is 1 μs in both cases.