Determine the approximate value of drain current (Ip) of the given circuit below. VDD 20V 1.8ka Q1 10mA --4.5V 1MQ 9100 O 1.88 mA O 2.48 mA O 1.29 mA 2.92 mA
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![Determine the approximate value of drain current (Ip) of the given circuit
below.
VDD
20V
1.8ka
Q1
= 10mA
-- 4.5V
1MO
9100
1.88 mA
O 2.48 mA
1.29 mA
O 2.92 mA](/v2/_next/image?url=https%3A%2F%2Fcontent.bartleby.com%2Fqna-images%2Fquestion%2F0104168f-b4d6-4fad-9291-b4224633af03%2F8dd161cd-0e93-478d-83c7-b693b92b6a98%2Foojeqja_processed.png&w=3840&q=75)
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- In the circuit shown below. Determine the following a. Vs (at the secondary) b. Vout (across RL) c. Vrip (ripple votage) d. VDC e. PIV (Peak Inverse Voltage) 10:1 Output 115 V mis 60 Hz RL 2.2 k) D, 50μF- All diodes are IN4001. Tund AlMannai EENG261 Page 5/11FAIRCHILD Discrete POWER & Signal Technologies SEMICONDUCTOR ru 1N4001 - 1N4007 Features • Low torward voltage drop. 10 a14 * High aurge eurrent cepablity. 0.160 4.06) DO 41 COLOR BAND DGNOTEs CAT-Cos 1.0 Ampere General Purpose Rectifiers Absolute Maximum Ratings T-26*Cuness atnerwioe rated Symbol Parameter Value Units Average Recttied Current 1.0 375" lead length a TA - 75°C Tsargei Peak Forward Surge Current 8.3 ms single halr-sine-wave Superimposed on rated load JEDEC method) 30 A Pa Total Device Dissipetion 2.5 20 Derste above 25°C Ra Tag Thermal Resistence, Junction to Amblent 5D Storage Temperature Range 55 to +175 -55 to +150 Operating Junetion Temperature PC "These rarings are imithg valuee above whien the serviceatity or any semiconductor device may te impaired. Electrical Characteristics T-20'Cunieas ofherwise roted Parameter Device Units 4001 4002 4003 4004 4005 4006 4007 Peak Repetitive Reverse Vellage Maximum RME votage DC Reverse Voltage Maximum Reverse Current @ rated VR…To lit the segment on for Common anode is O a. Connect A to +Vcc and give logic 0 to K O b. Connect A to 0 and give logic1 to K O. Connect A to +Vcc and give logic 1 to K O d. Connect A to 0 and give logic1 to K
- Except for FinFET and GaaFET discussed in the lecture, there are many new designs of FET. Please do a detailed study on any of them. In less than 200 words, state the advantages of it over the traditionalQ3: The figure below includes a bridge full-wave rectifier circuit with a diode type is1N4007. The input voltage is Vin V2 120 sin 2n60t 5:1 D3 D1 120 V RL Vp(out) D2 DA 10 kN a) Draw the output voltage waveform for the circuit in the figure and include thevoltage values. b) What is the peak inverse voltage (PIV) across each diode? c) Determine the rms voltage, current and power delivered to RL d) Determine the average voltage, current, and power delivered to RL e) What is the ratio of Po(de) to Po(ac)? lllConsider the circuit shown in the figure below with Ry=13 ko and R=9 kO. The Zener diode voltage is Vz = 3.5 V, then the currents Iz and , respectively, are equal to: R1 ww 20 V O a. 1.280 mA, 0.789 mA O b. 0.680 mA, 0.189 mA O c. 0.880 mA 0.389 mA O d. 1.080 mA, 0.589 mA
- What will be the out put of the H.W.R+PMMC meters, if an average responding a.c meter of half-wave rectifier read (2.36 v), and true form factor of input waveform is (1.414), * 2.36 V 4.71 V O 1.11 V 3 VIn the circuit shown below. Let Vm=37 V and i,=21 mA and Voa -0.7 V: iD is C0.8 ko 3 ko Vmcos(wt)V For t = Os, the current in the diode equals: Oa. 2 mA Ob. 0 mA Oc. -2 mA Od. 4 mA Ift = T/4, then the current in the diode equals: Оа. 4.24 mA Оb. 3.39 mA Oc. 5.3 mA Od. 2.71 mAChoices are: 45V 60V 10.09V 4.77V 30V 15V 9.55V 7.5V What id the right answer
- For the circuit shown below, the diode cut in voltage is Vy0.7V. Th value of I, varies over the range 0 s l, s 6mA. The Value of R-2.4kn and the value of Ve 4.8V Vo At which value of l, does the diode turn on O a.2.292 mA b. 1.833 mA c. 2.865 mA O d. 1.467 mA If l = 2.1mA, What is the value of Vo O a. 5.04 V O b. 4.03 V O c 6.3 V O d. 3.23 V If l= 1.6mA, What is the value of lo O a. 1.917 mA b. 0 mA O c 0.639 mA O d. 1.278 mA EO o8 UTM Figure B.1 shows a diode circuit and its DC load line analysis. Based on the SUT information obtained UT UT I kQ + VpQ- 3 UTM UTM Vs 3 500 2 UTM & UM TM &UTM UTM UTM &UTM 5 UTM Figure B.1 UTM & U UTM VD (V) 0.72 UTM i UTM UTM4. The circuits parameters for an uncontrolled full-wave rectifier are as follows: Vin rms = 20V w= 314,159 rad/s Rload = 1KQ All diodes are Silisium and the equivalent circuit given below will be used. VFT = 0.7V, Ron = 0.01Q VET Ron + a) Find the value of DC voltage of the RL load resistance. b) Find the required rated PIV values for each diodes. c) Find the maximum conduction current of the diodes. d) Plot waveforms of the output current and voltage values.
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