Design the circuit of Fig. 5.25 so that the transistor operates in saturation with I, = 0.5 mA and D = +3 V. Let the enhancement-type PMOS transistor have V, = -1 V and k¿(W/L)= 1 mA/V². Assume 2 = 0. What is the largest value that R, can have while maintaining saturation-region operation? %3D VDn = +5 V %3D RG1 oVD= +3V RG2 Rp Ip 0.5 mA Figure 5.25 Circuit for Example 5.7.

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Design the circuit of Fig. 5.25 so that the transistor operates in saturation with I, = 0.5 mA and
VD = +3 V. Let the enhancement-type PMOS transistor have V, = -1 V and k;(W/L)= 1 mA/N².
Assume 2 = 0. What is the largest value that R, can have while maintaining saturation-region operation?
%3D
VDD = +5 V
RGI
oVD = +3 V
RG2
Rp
Ip 0.5 mA
Figure 5.25 Circuit for Example 5.7.
Transcribed Image Text:Design the circuit of Fig. 5.25 so that the transistor operates in saturation with I, = 0.5 mA and VD = +3 V. Let the enhancement-type PMOS transistor have V, = -1 V and k;(W/L)= 1 mA/N². Assume 2 = 0. What is the largest value that R, can have while maintaining saturation-region operation? %3D VDD = +5 V RGI oVD = +3 V RG2 Rp Ip 0.5 mA Figure 5.25 Circuit for Example 5.7.
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P-channel Metal-Oxide Semiconductor (PMOS), N-channel Metal-Oxide Semiconductor (NMOS), and Complementary Metal-Oxide Semiconductor (CMOS)
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