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Design the bias circuit shown below for CS amplifier. Assume the MOSFET is specified to have Vt-1 V, kn= 4 mA/V², and VA= 100 V. Neglecting the Early effect, design for ID= 0.5 mA, VS = 3.5 V, and VD = 6 V using a power-supply VDD = 15 V, RL= 20KS, Rsig= 100KS.

Design the bias circuit shown below for CS amplifier. Assume the MOSFET is specified to have Vt-1 V, kn= 4 mA/V², and VA= 100 V. Neglecting the Early effect, design for ID= 0.5 mA, VS = 3.5 V, and VD = 6 V using a power-supply VDD = 15 V, RL= 20KS, Rsig= 100KS.

Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
Section: Chapter Questions
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Specify the value of RS,RD

Design the bias circuit shown below for CS amplifier. Assume the MOSFET is specified to have Vt=1 V, kn= 4 mA/V, and VA= 100 V. Neglecting the Early effect, design for ID= 0.5 mA, VS = 3.5 V, and VD = 6 V using a power-supply VDD= 15 V, RL= 20KN, Rsig= 100KQ. VDp (0 V) RGI Rp Cc2 Rsig RL O V Vgs = V; RG2 Rs Vsig R. Rin
Transcribed Image Text:Design the bias circuit shown below for CS amplifier. Assume the MOSFET is specified to have Vt=1 V, kn= 4 mA/V, and VA= 100 V. Neglecting the Early effect, design for ID= 0.5 mA, VS = 3.5 V, and VD = 6 V using a power-supply VDD= 15 V, RL= 20KN, Rsig= 100KQ. VDp (0 V) RGI Rp Cc2 Rsig RL O V Vgs = V; RG2 Rs Vsig R. Rin
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