Derive an expression for the total number of states in semiconductor material (per unit volume) between Ec ane Ec +kT, where E, is the conduction band edge (bottom of the conduction band), k is Boltzmann's constant and T is the temperature. And calculate this quantity (the total number of states).
Derive an expression for the total number of states in semiconductor material (per unit volume) between Ec ane Ec +kT, where E, is the conduction band edge (bottom of the conduction band), k is Boltzmann's constant and T is the temperature. And calculate this quantity (the total number of states).
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