Consider the 2 x-ray spectra from the same x-ray machine. Measured photon spectra from an x-ray tube with tungsten anode operated at a constant 140 kV potential. It has an inherent filter thickness of 2.50-mm aluminium and an additional filter of 6-mm aluminium (thin line) with HVL quality of 8.35-mm Al. Explain why the spectra are shifted in energy

Q: What will be the value of the intrinsic carrier concentration of a semiconductgor is the equilibrium…

A: Given values are –

Q: -10-22 eV Conduction band Band gap Ey blence band "Bands" are composed of closely spaced orbitals a…

A:

Q: What is the difference between direct band gap and indirect band gap .semiconductor materials

A: Given  Difference between  direct and indirect  band gap semiconductor.

Q: Q8) Make a comparison between pure (intrinsic ) and not pure (extrinsic ) silicon samples.

A: Intrinsic silicon sample Extrinsic silicon sample 1. In intrinsic semiconductor the electron and…

Q: Calculate the minimum “a” dimension needed to support a 0.75 cm signal in the dominant mode in a…

A:

Q: T10. Fermi energy level for intrinsic semiconductors lies (a) At middle of the band gap (b) Close to…

A: Fermi energy level for intrinsic semiconductor is depends upon the number of holes in valance band…

Q: Consider a silicon pn junction solar cell at 300 K with a reverse saturation current of 1x10-7…

A:

Q: The forward biased diode has an admittance (inverse of impedance) shown below. At what frequency in…

A: Given;IS=6.2×10-15 AVD=0.65 VZP=2.9 μsecAs, we know, VT=25 mVAs…

Q: how much is the nominal current with which a LED diode with semiconductor material (wavelength) LED…

A: (LED)light emitting diode is an electric component which emits light if the electric current flows…

Q: Describe, with the help of suitable examples, the effect of band gap on the electronic properties of…

A:

Q: Gallium Arsenate (GaAs) compared to Silicon: 1. Higher signal speed due to electron mobility 2.…

A: Gallium Arsenate (GaAs) has a property of growing more crystals. This is because GaAs consists of…

Q: What is the width of the "P" layer which is next to the cathode (n+) layer in SCR structure? a. 50…

A: SCR is a four layer , three junctions device with n- layer to increase forward blocking capability…

Q: The electron concentration in pure silicon is 1.5x1016 m-3 at 300°K. The silicon was doped with…

A:

Q: Consider a Silicon photodiode, which is designed for operation at 850 nm. If possible choices are…

A: Photodiodes are used to detect forward light scatter when the light energy is high, while…

Q: A laser diode is made for 1550 nm light emission and 2 nm gain linewidth. It has a resona cavity…

A: As a frequency sensor, a cavity resonator can be utilized. It functions as an energy trap, and this…

Q: Find the position of the intrinsic Fermi level with respect to the center of the bandgap in silicon…

A: Given, Ti=400 Kmn*=1.08momp*=0.56mo

Q: Compared to Gallium Arsenide (GaAs), Silicon: 1. Higher signal rate as electron mobility is higher…

A: GaAs has Arsenic which has higher vapor pressure.

Q: (b) Compare and construct the band energy diagram of conductor, insulator and semiconductor…

A: In conductors, insulators, and semiconductors, the " Band theory " explains the electronic…

Q: .24. Write the expression for an AM voltage wave with the following values: Unmodulated carrier =…

A: Given that Ac=20μ=0.4fm=5 kHzfc=200 kHz Assume that modulating signal m(t) and carrier c(t) is given…

Q: Determine the noise current for a diode with a forward bias of 1mA over a 100 kHz bandwidth. If the…

A:

Q: semiconductor is transparent to light with a wavelength longer than 0.87 μm, determine its band gap…

A:

Q: A silicon pin photodiode with an intrinsic layer, or i-layer, has a width of 10 (µm) and a reverse…

A: It is given that: W=10 μm=10×10-6 mηe=0.9E=35 fJ=35×10-15 J

Q: Determine the noise current for a vacuum tube diode with a forward bias of 1 mA over a 100 kHz…

A: It is given that: Idc=1mA∆f=100kHz

Q: QUESTION 6 A PIN produces an average photocurrent of 1 mA, when exposed to a constant flow of…

A: Given information about a PIN is, Photocurrent is Ip=1 mA=1×10-3 A. Bandwidth is B=100 MHz=100×106…

Q: Determine the shot noise for a diode with a forward bias of 1.40 mA over an 80kHz bandwidth.

A: The solution is given below

Q: Interpret the different transitions in the absorption process occurring 6 between bands in…

A:

Q: 2.24 InP is doped with ND = 2.0 × 10 15 cm³ and N₁ = 1014 cm³. Draw the energy band diagram and…

A: An energy band diagram is a graphical representation used in solid-state physics and semiconductor…

Q: noise current

A: Diode - When diode is forward biased it is short circuited and when it is reverse biased it is open…

Q: -3 An intrinsic silicon sample is doped with boron. Find doping concentration in cm if Fermi level…

A: Given, An intrinsic silicon sample is doped with boron, Fermi level gap, Efi-Efp=0.416 eV…

Unijunction Transistor (UJT)

The Unijunction Transistor (UJT) is a three-terminal switching semiconductor device. It contains an n-shaped silicone object bar with a terminal attached to its two ends known as base one and base two. The third terminal is connected to a highly enclosed p-type material attached to the bar section of its length and is known as emitter. As there is only one corrective cross within the device, it is therefore called the 'Unijunction' transistor. The characteristics of the single junction transistor show the wrong resistance if it finds use in resting oscillator circuits for various applications.