Consider a simple pn-junction diode. Suppose this diode carries a current of 50 mA with a forward bias voltage of 200 mV at room temperature (293 K). What is the current when a reverse bias of 200 mV is applied?

Q: An n-type semiconductor has an intrinsic concentration of 1.45 x 10^16/m^3. Given that the…

A: Given:  The intrinsic concentration is ni = 1.45 x 1016 /m3 The mobility of an electron is μe = 0.4…

Q: a) V=0.700 para l=1.00A Is=6.91x101³A, V=0.585V b) V=0.650 para l=1.00mA Is=5.11x10*15A, V=0.535V c)…

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Q: The formula for the contact potential of a pn-junction diode is given by the formula: (NaNa n? Aøo…

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Q: The voltage of a BYZ83 type Zener diode is given as V, = 20v, power P, 300mW, and Zener resistance…

A: Zener parameters areVz=20VPz=300 mWPz=300×10-3WRz=20Ω

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Q: -3 junction diode has the following parameters: ND = 102²2 m-³, = 0.02 m² /V.s, T₁=T₁=1 μs, A=1mm².…

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Q: 3. The electron number density in a semiconductor varies from 1020 m³ to 10¹2 m³ linearly over a…

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Q: Measuring diode voltage and diode current in this circuit, the student generates the following table…

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Q: 7. At what temperature the concentration of intrinsic electrons in silicon equals 2x10" cm? 8. Find…

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Q: Which of the following statements is generally true regarding mobility in semiconductors such as Si…

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Q: Silicon is doped with phosphorus atoms (column V of Mendeleev table) with a concentration of 1018…

A: Here we can see, ND >>ni .......................................................... since,…

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Q: 3. D, is a Zener diode with an -100 mA and a maximum allowed power dissipation of 20 w. R1 5 ohms 25…

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A: Write the ideal diode equation as: Also, at room temperature T = 300 K.

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A: Given: Vcc=20V, RB=270×103Ω, RC=470Ω, β=125 Applying KVL in the loop (through base resistance) :…

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Q: Q. 2. In a P-N junction diode, width of depletion layer is 0 · 5µm and potential barrier is 0-5V.…

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