7. At what temperature the concentration of intrinsic electrons in silicon equals 2x10" cm? 8. Find current density in a silicon p-n diode at room temperature at a negative voltage of 5 V. The p- and n-areas of the diode are doped with acceptors and donors at a concentration 10" cm. Assume that the lifetime of electrons and holes is about 1 microsecond: r,r, 1 us.
7. At what temperature the concentration of intrinsic electrons in silicon equals 2x10" cm? 8. Find current density in a silicon p-n diode at room temperature at a negative voltage of 5 V. The p- and n-areas of the diode are doped with acceptors and donors at a concentration 10" cm. Assume that the lifetime of electrons and holes is about 1 microsecond: r,r, 1 us.
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Transcribed Image Text:7. At what temperature the concentration of intrinsic electrons in silicon equals 2×10" cm?
8. Find current density in a silicon p-n diode at room temperature at a negative voltage of 5 V. The p-
and n-areas of the diode are doped with acceptors and donors at a concentration 10" cm. Assume that
the lifetime of electrons and holes is about 1 microsecond: r,=T, =1 us.
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