Consider a silicon pn junction at T 300K. Assume the doping concentration in the n region is1020 cm-3 and the doping concentration in thep region is 1019cm3, and assume that a forward biasof 0.30 V is applied to the pn junction. Note/ n; = 1.5 x 1010 cmст-3Calculate the minority carrier concentration at the edge of the space charge regions.

Answered: Image /qna-images/answer/599d979f-80f0-4362-9652-02c641c67931.jpg

Consider a silicon pn junction at T 300 K. Assume the doping concentration in the n region is 1020cm-3 and the doping concentration in thep region is 101cm-3, and assume that a forward bias of 0.30 V is applied to the pn junction. Note/ n, = 1.5 x 1010 Cm-3 Calculate the minority carrier concentration at the edge of the space charge regions.

Consider a silicon pn junction at T 300 K. Assume the doping concentration in the n region is 1020cm-3 and the doping concentration in thep region is 101cm-3, and assume that a forward bias of 0.30 V is applied to the pn junction. Note/ n, = 1.5 x 1010 Cm-3 Calculate the minority carrier concentration at the edge of the space charge regions.

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

See similar textbooks

Similar questions

Determine the reverse voltage and reverse current for the diode in the Figure below for each of the diode models. Also find the voltage across the limiting resistor in each case. Assume IR = 1-µA. a. The value of reverse current, assuming complete diode model. (in µA) b. The value of reverse voltage, assuming complete diode model. (in mV) c. The value of voltage across the limiting resistor, assuming complete diode model. (in V)
24 A 30-volt forward voltage is applied to a silicon diode in series with a load of 3 kf2. Draw the de load line. What is the slope of the line? Solution The value of voltage Vy across diode is given by V, V R, Since R and V are fixed values, this equation can by represented by a straight line on V- characteristics of diode; this is de load line. When Ip 0, maximum voltage across the diode V 30 V. This is point B(30, 0). 10 mA 30 V Fig. 2.25 Problem 2.4.
From the diode circuit shown below. If E=40 V and RL=400, determine the current supplied from the battery. the voltage across the load resistance. and the voltage across diode D2 if all the diodes are silicon with an internal resistance of 2 0. RL E= a. The Current supplied by battery is b. The Voltage across Load resistance RL is c. The Voltage across diode D2 is
Diode current and temperature. At normal operating conditions, the current-voltage relation for a diode (p-n semiconductor junction) is given by eV 1 (V) - Is (exp (817)-1) = Where kB = 8.617 x 10-5[eV/K] In terms of e, kg, and T, what is a possible range of voltage such that the diode is approximately ohmic (satisfies Ohm's law)?
Consider the diode circuit shown below. If Vs is a sinewave with a peak amplitude of 12 Volts at 60Hz, and diodes D1 & D2 are considered ideal, sketch the appearance of the waveform at node voltage Vout . Sketch the appearance of the waveform at Vout .
3. A metal contact to a n-type semiconductor can be considered as a p*-n junction with NA > ND. Draw an energy band diagram of the contact showing the Schottky barrier eoz and the depletion width d. Then draw the energy band diagram in forward and reverse biased conditions. Indicate how the +V or -V bias affects the contact potential and the depletion width. Explain how the bias changes the forward current due to the injection of electrons from the semiconductor into the metal, and the reverse current Io from the flow of metal free carriers into the semiconductor. Show that the rectifying behavior is just like that in a p-n junction.
Using constant-voltage diode model, where VDO = 0.5 V, plot vo versus vi. Make sure to show all steps, initial plots with dashed lines, final plot, amplitudes, slopes, intersection with axis, etc.
Determine the diode current (in Ampere) at 70°C for a silicon diode with reverse saturation current 70 nanoAmpere and an applied forward bias of 0.8 volts. The constant k value is: The Temperature (in Kelvin) is: The Diode current (in Ampere) is:
Calculate the built-in potential barrier in a pn junction. Consider a silicon pn junction at T = 300 with doping concentrations of Na = 2x10¹7 cm¯³ and Nd=1015 cm 3.
a) What is n-type semiconductor materials? What are the majority and the minority cariers? b) What is p-type semiconductor materials? What are the majority and the minority cariers? c) What is depletion region of a p-n junction diode? d) Describe in your own words the forward-bias and reverse- bias conditions of a p-n junction diode. e) Draw a Diode Symbol and label the anode and the cathode. Si Ge 2 ka f) Find V, in the circuit shown in +20 V 2 k2 15V Fig. Fuad Al-Mannai EENG261 Page 1
TRUE OR FALSE- When different diode models are connected in series in such a way that they are oriented similarly i.e. will allow a specific current flow, the voltage required to forward bias the series connection is the forward voltage of the diode with the higher knee voltage specification. - When different diode models are connected in parallel in such a way that they are oriented similarly i.e. will allow a specific current flow, the voltage required to forward bias the parallel connection is lower than the forward voltage of either of the diodes knee voltage specification since they are connected in parallel i.e. their equivalent resistance is lower as well.