Consider a sample of GaAs at 300 K in which the Fermi level is 0.40 eV below the bottom of the conduction band. For the following questions, the Boltzmann approximation is valid. a) What is the probability the energy state Ec is occupied by an electron? b) What is the probability a state E = 0.20 eV above the valence band is empty? c) What is the carrier concentration of electrons in this sample? Holes?
Consider a sample of GaAs at 300 K in which the Fermi level is 0.40 eV below the bottom of the conduction band. For the following questions, the Boltzmann approximation is valid. a) What is the probability the energy state Ec is occupied by an electron? b) What is the probability a state E = 0.20 eV above the valence band is empty? c) What is the carrier concentration of electrons in this sample? Holes?
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Consider a sample of GaAs at 300 K in which the Fermi level is 0.40 eV below the bottom
of the conduction band. For the following questions, the Boltzmann approximation is
valid.
a) What is the probability the energy state Ec is occupied by an electron?
b) What is the probability a state E = 0.20 eV above the valence band is empty?
c) What is the carrier concentration of electrons in this sample? Holes?
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