Consider a homogeneously doped n-type semiconductor at 300K. The electron concentration is equal to 10" cm', n- 10"cm', 1000 cm/V-sec. ,- 500 cmV-sec. Tuo 2 10's. To-1x10's and the applied electric field is zero. A light beam in x-direction was applied to the sample resulting excess e-lh pair of 2 10 cm at x-0(edge of the sample). Assuming steady state, then hole diffusion current density at x-20jum is . .HA/em. (use kT-0.025eV at 300K) a)43 b)62 c) 93 d) 185 e) 280

Consider a homogeneously doped n-type semiconductor at 300K. The electron concentration is equal to 10" cm', n- 10"cm', 1000 cm/V-sec. ,- 500 cmV-sec. Tuo 2 10's. To-1x10's and the applied electric field is zero. A light beam in x-direction was applied to the sample resulting excess e-lh pair of 2 10 cm at x-0(edge of the sample). Assuming steady state, then hole diffusion current density at x-20jum is . .HA/em. (use kT-0.025eV at 300K) a)43 b)62 c) 93 d) 185 e) 280

Chemistry

10th Edition

ISBN:9781305957404

Author:Steven S. Zumdahl, Susan A. Zumdahl, Donald J. DeCoste

Publisher:Steven S. Zumdahl, Susan A. Zumdahl, Donald J. DeCoste

Chapter1: Chemical Foundations

Section: Chapter Questions

Problem 1RQ: Define and explain the differences between the following terms. a. law and theory b. theory and...

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