I need the answer as soon as possible Calculate the thermal-equilibrium hole concentration (cm-3) in Silicon at T=375 k. Assume theFermienergyis 0.25 eV above the valence band energy. The value of N=1.04x1019 cm-3 atT=300K.

According to question --- Given data-- T = 375 K. fermi energy E f = 0.25 eV above the valence band…

Answered: Calculate the thermal-equilibrium hole…

University Physics Volume 3

17th Edition

ISBN:9781938168185

Author:William Moebs, Jeff Sanny

Publisher:William Moebs, Jeff Sanny

Chapter9: Condensed Matter Physics

Section: Chapter Questions

Problem 79P: At what temperature, in terms of Tc, is the critical field of a superconductor one-half its value at...

See similar textbooks

Similar questions

The measured density of a KCl crystal is 1.984 g/cm3. What is the equilibrium separation distance of K+ and Cl- ions?
At what temperature, in terms of Tc, is the critical field of a superconductor one-half its value at T = 0 K?
A sample of N-type silicon is at the room temperature. When an electric fi eld with strength of 1000 Vlcm is applied to the sample. the hole velocity is measured and found to be 2 x 105 cm/sec.
Calculate the electron-hole den sity under steady-state exposur e in n-type silicon with GL = 10 ^ 16cm ^ -3s ^ -1 and Nd = 10 ^ 15cm ^ -3 and Tn = Tp = 10us. %3D %3D
i need the answer quickly
i need the answer quickly
I need the answer as soon as possible
An abrupt silicon pn junction at zero bias has dopant concentrations of Nd = 5 X 1017 cm 3 and N₂ = 1 X 1017 cm-3 at T = a 300K. Determine the peak electric field for this junction for a reverse voltage of 5 V. Emax = O Emax O Emax 3.88 X 105 V/cm Emax 3.21 X 105 V/cm Emax = 1.70 X 105 V/cm 1.35 X 105 V/cm =
The intrinsic carrier concentration of silicon (Si) is expressed as - E n₁=5.2×10¹5T¹.5exp- i electrons at 30°C. n = cm -3 g 2kT cm -3 where Eg = 1.12 eV. Determine the density of Round your answer to 0 decimal places.
e l::00 %7 L& A ... Exercises of optical properties.pdf X Exercises Ex1 Salt (NaCl) absorbs very strongly at infrared wavelengths in the re- strahlen band. The complex dielectric constant at 60um is given by ɛ, =25+i33. Calculate the absorption coefficient and reflectivity at this wavelength. Ex2 The reflectivity of silicon at 560nm is 76% and the absorption coefficient is 5.6*10'm1. Calculate the transmission and optical density of a sample with a thickness of 250nm.
Problem 5. Assume that at T=300 K, the electron mobility in a silicon sample is 1300 cm²/Vs. If an electric field of 100 V/cm is applied what is the excess energy of the electrons? How does this excess energy compare with the thermal energy? If you assume that the mobility is unchanged how does the same comparison work out at a field of 5 V/cm. (NOTE: Excess energy is equal to ½ m₂* v² where Va is the drift velocity.)
The electron and hole diffusion coefficients in silicon are D, 35 cm²/s %3D and D,=12.5 cm2/s, respectively. Calculate the electron and hole diffusion current densities (a) if an electron concentration varies linearly fromn= 105 cm-3 to n = 1016 cm-3 over the distance from x =0 to x = 2.5 um and (b) if a hole con- centration varies linearly from p = 1014 cm-3 to p 5 x 1015 cm-3 over the dis- tance from x =0 to x 4.0 µm. %3D %3D %3D write the final answer below a) hole current density: electron current density b) hole current density: electron current density

SEE MORE QUESTIONS

Recommended textbooks for you

University Physics Volume 3

Physics

ISBN:

9781938168185

Author:

William Moebs, Jeff Sanny

Publisher:

OpenStax

Modern Physics

Physics

ISBN:

9781111794378

Author:

Raymond A. Serway, Clement J. Moses, Curt A. Moyer

Publisher:

Cengage Learning

University Physics Volume 3

Physics

ISBN:

9781938168185

Author:

William Moebs, Jeff Sanny

Publisher:

OpenStax

Modern Physics

Physics

ISBN:

9781111794378

Author:

Raymond A. Serway, Clement J. Moses, Curt A. Moyer

Publisher:

Cengage Learning

SEE MORE TEXTBOOKS

Calculate the thermal-equilibrium hole concentration (cm-3) in Silicon at T=375 k. Assume the Fermi energy is 0.25 eV above the valence band energy. The value of Ny-1.04x1019 cm-3 at T=300K.