Calafate In, Ic, JE, &, VCE, VOB, VBE and VICE (aff) = 100 given: 10.1 + Vcc = 15 V L RB = 180kh +21 FOX 15 Re = 1KR Re=IKR CE NE Calafate In, Ic, JE, &, VCE, VOB, VOE and VECE (aff) B=100° + Vcc 15 V ட RB = 180kh } 01X1)+21=1 IB Re=1kn V NE 4 LE OLX 3 201 99
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- I k2 Q2 /: For the Zener diode network, R 1. if V; =20 v, check if the Zener diode is in a breakdown and find VL, VR, Iz, and Pz Vz = 10 V IZM = 32 mA RL V, = 50 V 2. Find the maximum and minimum value of V¡ to ensure that VL=VzFor the circuit shown in the Figure , consider silicon diodes with forward drop voltage of 0.7 V. If Vs = 150 Vrms and RL = 8 KN, the average value of load current is: 1:1 Vout Vs RL Oa. 8.413 mA Ob. 10.413 mA Oc. 12.413 mA Od. 14.413 mA elleeQ2: A cubic doped n-type silicon semiconductor sample at T=300 K, R-10k2, J-50A/cm² when 5V is applied. Calculate μn=0.85m²/V.s, ND. .
- : A uniform piece of n-type of silicon that is lum long senses a voltage of 1 v. Determine the velocity of the electrons. Use p1350 cm/V.sesQ1/ Consider the depletion load transistor based at VoD-3 V, Ven=-2 V, Vtnp= 0.7 V, (W/L)D=10, such that the maximum power dissipation is 320 μW, when VI = 3 V. And Kn= 60μA/V, Determine the output voltage.LANGIT 10. Design a suitable circuit to obtain an output waveform from a sinusoidal input of peak voltage 20 V. Assume germanium diodes 4.1V - 12.3 V
- Q4: Find VL, IL, IZ, IR and PZ for the Zener Diode network shown below: 220 2 Rs Vi=20 V R Vz=10 V PzM=400 mW 470 2chapter 4.PNG → Problems Ql: A bar of intrinsic silicon having a cross section area of 3x104 m² has an n=1.5x1016m3. If µ=0.14 m2/V.s and u,-0.05 m2/V.s. Find the long of the bar if the current is 1.2mA and the applied voltage is 9V. (Ans: 1.026mm) Q2: Calculate the thermal equilibrium electron and hole concentration in silicon at T=300K for the case when the Fermi energy level is 0.22 eV below the conduction band energy. Eg= 1.12 eV. The values of Ne and N, are 2.8x1025/m³ and 1.04x1025/m', respectively. (Ans: n=5.73x102²/m², p-8.43x10%m³) Q3: Find the intrinsic carrier concentration in silicon at (a) T=200K, (b) T=400K. The values of Ne and N, are 2.8x1025/m and 1.04x1025/m', respectively. (Ans: (a) 7.68x1010/m², (b) 2.38×1018/m³) Q4: Determine the position of the intrinsic Fermi level with respect to the center of the bandgap in GaAs at T=300K. mn=0.067 mo, m,=0.48 mo (Ans: -38.2meV) IIThe measured density of a CsCl crystal is 3.988 g/cm3. What is the equilibrium separate distance of Cs+ and Cl- ions?