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(b) A voltage divider bias circuit is shown in Figure Q2(b(i)) and common- emitter (C-E) output characteristic is shown in Figure Q2(b(ii)). Assume the transistor is made up of silicon. Calculate the following: (i) Vcc, VB, VE, and lE; (ii) RE, and Rc.

(b) A voltage divider bias circuit is shown in Figure Q2(b(i)) and common- emitter (C-E) output characteristic is shown in Figure Q2(b(ii)). Assume the transistor is made up of silicon. Calculate the following: (i) Vcc, VB, VE, and lE; (ii) RE, and Rc.

Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
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(b) A voltage divider bias circuit is shown in Figure Q2(b(i)) and common- emitter (C-E) output characteristic is shown in Figure Q2(b(ii)). Assume the transistor is made up of silicon. Calculate the following: (i) Vcc, VB, VE, and lɛ; (ii) RE, and Rc. V c Rc I (mA) R3 1 100k 1.875mA B A E point 1.43 mA 50k R82 RE VE (V) 3.56V 15V Figure Q2(b(i)) Figure Q2(b(ii)
Transcribed Image Text:(b) A voltage divider bias circuit is shown in Figure Q2(b(i)) and common- emitter (C-E) output characteristic is shown in Figure Q2(b(ii)). Assume the transistor is made up of silicon. Calculate the following: (i) Vcc, VB, VE, and lɛ; (ii) RE, and Rc. V c Rc I (mA) R3 1 100k 1.875mA B A E point 1.43 mA 50k R82 RE VE (V) 3.56V 15V Figure Q2(b(i)) Figure Q2(b(ii)
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