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At T = 300 K, the band gap and the intrinsic carrier concentration of GaAs are 1.42 eV and 106 cm-3, respectively. In order to generate electron hole pairs in GaAs, which one of the wavelength (AC) ranges of incident radiation, is most suitable? (Given that: Plank's constant is 6.62 x 10-34 J-s, velocity of light is 3 x 1010 cm/s and charge of electron is 1.6 × 10-1⁹ C)

At T = 300 K, the band gap and the intrinsic carrier concentration of GaAs are 1.42 eV and 106 cm-3, respectively. In order to generate electron hole pairs in GaAs, which one of the wavelength (AC) ranges of incident radiation, is most suitable? (Given that: Plank's constant is 6.62 x 10-34 J-s, velocity of light is 3 x 1010 cm/s and charge of electron is 1.6 × 10-1⁹ C)

Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
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At T = 300 K, the band gap and the intrinsic carrier concentration of GaAs are 1.42 eV and 106 cm -3, respectively. In order to generate electron hole pairs in GaAs, which one of the wavelength (AC) ranges of incident radiation, is most suitable? (Given that: Plank's constant is 6.62 x 10-34 J-s, velocity of light is 3 x 1010 cm/s and charge of electron is 1.6 x 10-19 C)
Transcribed Image Text:At T = 300 K, the band gap and the intrinsic carrier concentration of GaAs are 1.42 eV and 106 cm -3, respectively. In order to generate electron hole pairs in GaAs, which one of the wavelength (AC) ranges of incident radiation, is most suitable? (Given that: Plank's constant is 6.62 x 10-34 J-s, velocity of light is 3 x 1010 cm/s and charge of electron is 1.6 x 10-19 C)
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