QUESTION 5 Given that the effective masses of electron and holes in germanium, calculate the position of the intrinsic Fermi energy level in units of eV with respect to the centre of the band gap at T = 300K. O a. -0.0088 O b. -0.0808 O c. -0.0770 O d. -0.0077

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In a particular semiconductor material, the
effective density of states functions are given by
constants independent of
and
where
and
temperature. The experimentally determined
intrinsic carrier concentrations as function of
temperature are given in the table below:
Assume energy gap is temperature independen
t.
Determine the energy gap in units of eV.
a. 1.52
b. 2.4
c. 1.25
d. 3.2
Transcribed Image Text:In a particular semiconductor material, the effective density of states functions are given by constants independent of and where and temperature. The experimentally determined intrinsic carrier concentrations as function of temperature are given in the table below: Assume energy gap is temperature independen t. Determine the energy gap in units of eV. a. 1.52 b. 2.4 c. 1.25 d. 3.2
QUESTION 5
Given that the effective masses of electron and
holes in germanium, calculate the position of the
intrinsic Fermi energy level in units of eV with
respect to the centre of the band gap at T = 300K.
%3D
a. -0.0088
b. -0.0808
C. -0.0770
d. -0.0077
Transcribed Image Text:QUESTION 5 Given that the effective masses of electron and holes in germanium, calculate the position of the intrinsic Fermi energy level in units of eV with respect to the centre of the band gap at T = 300K. %3D a. -0.0088 b. -0.0808 C. -0.0770 d. -0.0077
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